The role of oxygen-vacancy defect types in improved NO2 sensing performance of nanocomposites and perovskite ZnO-SnO2 and ZnSnO3 thin films
摘要
Metal oxide semiconductor thin films are widely explored for their multifunctional roles in gas sensing, optoelectronics, and environmental monitoring. In this work, ZnO–SnO2 and ZnSnO3 thin films were fabricated using the spray pyrolysis technique. Their structural, morphological, compositional, and microstructural features were systematically investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and high-resolution TEM (HRTEM). Thin films were synthesized by mixing zinc chloride and tin (II) chloride pentahydrate precursors in molar ratios of 25:75, 50:50, and 75:25 (1:3, 1:1, and 3:1), leading to the formation of ZnO–SnO2 and perovskite ZnSnO3 phases, as confirmed by XRD. The corresponding average crystallite sizes were approximately 13 nm, 11 nm, and 9 nm. FESEM analysis revealed well-defined hexagonal crystallites forming micro-aggregates, with rod-like structures. Among the tested samples, the 1:1 Zn:Sn composition film exhibited oxygen deficiency compared to the other ratios. Gas sensing tests against LPG, H2, NH3, C2H5OH, CO2, NO2, and Cl2 demonstrated superior performance of the 1:1 thin film, which delivered the highest response towards 50 ppm NO2 at 300 °C, along with a fast response time of 50 s and a short recovery time of 70 s. These findings indicate that ZnO–SnO2 and ZnSnO3 thin films, particularly at the 1:1 ratio, are promising candidates for efficient NO2 detection in practical applications.