<p>This study used the ultrasonic spray technique to examine how Sr doping (0–5%) influences the structural, morphological, and electrochemical properties of CuO deposited on fluorine tin oxide (FTO) substrate. A particular property was highlighted: the XRD-Raman spectrum confirmed the successful production of Cupric oxide (CuO) at 0%Sr, followed by a significant shift in the XRD peaks at 3%Sr as a result of the majority insertion of Sr in the CuO lattice structure. Nevertheless, when the %Sr was increased to 5%, a simultaneous formation of the Sr-CuO nanophase was favored over the incorporation of strontium into the CuO. EDX and SEM-morphology studies show successively the presence of the three deposited elements Cu, Sr, and O, as well as a significant reduction in the size of CuO nano-structures as the %-Sr doping level increases, respectively. From an optical point of view, this structural-morphological modification due to doping affected the absorption property and, as a result, the bandgap <i>E</i><sub><i>g</i></sub> decreases slightly from 1.52 to 1.48 and then 1.44 eV, respectively, for 1%-Sr and 3%-Sr, but increases to 1.46 eV for the pass 3 → 5%-Sr. In addition, the CV (cyclic voltammetry) and the GCD (galvanostatic discharge) tests showed that this structural change led to a significant change in the energy storage capacity of Sr-doped CuO-thin films electrodes. The maximum capacity value has increased from 120 mF/cm<sup>2</sup> (0%) to 165 mF/cm<sup>2</sup> (3%) and then to 139 mF/cm<sup>2</sup> for 5%-Sr, which shows that the Sr doping of CuO can improve its pseudocapacitive properties.</p>

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Improving the supercapacitive quality of CuO by Sr doping for energy storage application

  • M. Aarab,
  • M. Oubakalla,
  • M. El Bouji,
  • Y. Nejmi,
  • I. Boudene,
  • M. Beraich,
  • A. Zarrouk,
  • M. El Hezzat

摘要

This study used the ultrasonic spray technique to examine how Sr doping (0–5%) influences the structural, morphological, and electrochemical properties of CuO deposited on fluorine tin oxide (FTO) substrate. A particular property was highlighted: the XRD-Raman spectrum confirmed the successful production of Cupric oxide (CuO) at 0%Sr, followed by a significant shift in the XRD peaks at 3%Sr as a result of the majority insertion of Sr in the CuO lattice structure. Nevertheless, when the %Sr was increased to 5%, a simultaneous formation of the Sr-CuO nanophase was favored over the incorporation of strontium into the CuO. EDX and SEM-morphology studies show successively the presence of the three deposited elements Cu, Sr, and O, as well as a significant reduction in the size of CuO nano-structures as the %-Sr doping level increases, respectively. From an optical point of view, this structural-morphological modification due to doping affected the absorption property and, as a result, the bandgap Eg decreases slightly from 1.52 to 1.48 and then 1.44 eV, respectively, for 1%-Sr and 3%-Sr, but increases to 1.46 eV for the pass 3 → 5%-Sr. In addition, the CV (cyclic voltammetry) and the GCD (galvanostatic discharge) tests showed that this structural change led to a significant change in the energy storage capacity of Sr-doped CuO-thin films electrodes. The maximum capacity value has increased from 120 mF/cm2 (0%) to 165 mF/cm2 (3%) and then to 139 mF/cm2 for 5%-Sr, which shows that the Sr doping of CuO can improve its pseudocapacitive properties.