<p>In this study, we prepared shuttle-shaped nanoporous V<sub>2</sub>O<sub>5</sub> materials with different tin doping ratios using a hydrothermal method in combination with metal–organic frameworks (MOFs) and investigated the effect of Sn doping on the lithium storage performance of V<sub>2</sub>O<sub>5</sub> as a cathode material for lithium-ion batteries. Additionally, first-principles density functional theory (DFT) calculations were employed to analyze the influence of Sn doping on the geometric and electronic structures of V<sub>2</sub>O<sub>5</sub>. It shows that appropriate Sn doping can significantly enhance the lithium storage activity and multiplicity rate performance of V<sub>2</sub>O<sub>5</sub>, reduce the electrochemical reaction resistance of the material, and improve the Li<sup>+</sup> diffusivity in the material. The DFT calculations indicate that the stable doping sites of Sn in V<sub>2</sub>O<sub>5</sub> are located in the interlayers. This doping not only broadens the interlayer spacing but also reduces the bandgap value, enhances the conductivity, and improves the Li<sup>+</sup> deintercalation kinetics of V<sub>2</sub>O<sub>5</sub>, ultimately leading to superior energy storage performance.</p>

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Interlayer-expanded Sn-doped V2O5 cathodes via MOF-assisted synthesis for high-rate lithium storage

  • Jun Lu,
  • Shengping Wang,
  • Menghui Mu,
  • Bingcheng Zhou,
  • Yanwei Li,
  • Zhengguang Zou,
  • Shenglin Zhong,
  • Shangwang Le

摘要

In this study, we prepared shuttle-shaped nanoporous V2O5 materials with different tin doping ratios using a hydrothermal method in combination with metal–organic frameworks (MOFs) and investigated the effect of Sn doping on the lithium storage performance of V2O5 as a cathode material for lithium-ion batteries. Additionally, first-principles density functional theory (DFT) calculations were employed to analyze the influence of Sn doping on the geometric and electronic structures of V2O5. It shows that appropriate Sn doping can significantly enhance the lithium storage activity and multiplicity rate performance of V2O5, reduce the electrochemical reaction resistance of the material, and improve the Li+ diffusivity in the material. The DFT calculations indicate that the stable doping sites of Sn in V2O5 are located in the interlayers. This doping not only broadens the interlayer spacing but also reduces the bandgap value, enhances the conductivity, and improves the Li+ deintercalation kinetics of V2O5, ultimately leading to superior energy storage performance.