Corrosion inhibition threshold effect of 1,2,4-triazole in alkaline chemical mechanical polishing of copper: Investigations using synchrotron radiation microinfrared
摘要
The threshold effect of 1,2,4-triazole (TAZ) on copper corrosion inhibition under alkaline chemical mechanical polishing (CMP) process is investigated using the synchrotron radiation micro-infrared spectroscopy. Electrochemical experiments show that 15 mM TAZ provides the best corrosion inhibition for copper in CMP slurry. The best inhibition efficiency is 85.34%. Surface morphology tests show that 15 mM TAZ provides effective protection for copper surface. The results of synchrotron radiation microinfrared reveal that the integrity of the surface film decreases significantly at concentrations above the threshold level. This is mainly due to the agglomeration of Cu-TAZ complexes on copper surface. In addition, the corrosion inhibition mechanism of TAZ for copper in alkaline CMP slurry is discussed in depth.
Graphical abstract