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<p>This research describes the fabrication and properties of graphene–plasmon hybrid interlayers to achieve high hot electron generation and pronounced optoelectronic response. The monolayer graphene on Au and Ag nanodisks and nanorods demonstrated the presence of a strong plasmon–graphene coupling, showing the redshift of the LSPR up to 20–25&#xa0;nm and significant improvement of field localization. Ultrafast transient absorption spectroscopy showed a lifetime of hot electrons that were up to 3.8&#xa0;ps, as well as injection efficiencies greater than 46%. Gate-tunable photodetectors showed the highest responsivity of 435&#xa0;mA/W, as well as the retention of performance in 500 measurement cycles and up to 100&#xa0;°C. Dynamic control of the Fermi level by external modulation (chemical doping, e.g., HNO<sub>3</sub> and NH<sub>3</sub>) was also possible. Field enhancements (up to 30 folds) and hot carrier injection efficiencies were confirmed by FDTD and NEGF simulations and experiments. Such hybrid systems offer a good prospect in the attainment of broadband, adaptive, energy-efficient optoelectronic devices throughout the applications of visible to NIR regions.</p> Graphical Abstract <p>Graphene–plasmon hybrid devices for tunable hot electron photodetection</p> <p>The concept behind this study is the use of the advantage of the localized surface plasmon resonance (LSPR) of nanostructured metallic materials (Au and Ag nanodisks/nanorods) to produce hot electrons (under light excitation) and inject them into monolayer graphene, effectively. Graphene–plasmon hybrid devices for tunable hot electron photodetection are in the figure. The hybrid plasmon–graphene structure can also facilitate light absorption and increase photocurrent generation and gate-controllable photoresponses. The external controls, such as temperature and chemical doping, modify the hot carrier dynamics. By utilizing accurate nanofabrication and material engineering, the study presents a foundation for high-performance optoelectronic materials owing to the use of hot electronic photophysics and plasmonic&#xa0;enhancement.</p>

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Graphene–Plasmon Hybrid Interlayers for Dynamically Tunable Hot Electron Generation in Visible-to-NIR Ranges

  • 期刊论文

  • 发表日期：

    2025年9月2日

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  • Viyat Varun Updhay,
  • N. Nagabhooshanam,
  • Sharad Rathore,
  • Madan Lal,
  • A. C. Santha Sheela,
  • D. Beulah,
  • A. Rajaram

摘要

This research describes the fabrication and properties of graphene–plasmon hybrid interlayers to achieve high hot electron generation and pronounced optoelectronic response. The monolayer graphene on Au and Ag nanodisks and nanorods demonstrated the presence of a strong plasmon–graphene coupling, showing the redshift of the LSPR up to 20–25 nm and significant improvement of field localization. Ultrafast transient absorption spectroscopy showed a lifetime of hot electrons that were up to 3.8 ps, as well as injection efficiencies greater than 46%. Gate-tunable photodetectors showed the highest responsivity of 435 mA/W, as well as the retention of performance in 500 measurement cycles and up to 100 °C. Dynamic control of the Fermi level by external modulation (chemical doping, e.g., HNO3 and NH3) was also possible. Field enhancements (up to 30 folds) and hot carrier injection efficiencies were confirmed by FDTD and NEGF simulations and experiments. Such hybrid systems offer a good prospect in the attainment of broadband, adaptive, energy-efficient optoelectronic devices throughout the applications of visible to NIR regions.

Graphical Abstract

Graphene–plasmon hybrid devices for tunable hot electron photodetection

The concept behind this study is the use of the advantage of the localized surface plasmon resonance (LSPR) of nanostructured metallic materials (Au and Ag nanodisks/nanorods) to produce hot electrons (under light excitation) and inject them into monolayer graphene, effectively. Graphene–plasmon hybrid devices for tunable hot electron photodetection are in the figure. The hybrid plasmon–graphene structure can also facilitate light absorption and increase photocurrent generation and gate-controllable photoresponses. The external controls, such as temperature and chemical doping, modify the hot carrier dynamics. By utilizing accurate nanofabrication and material engineering, the study presents a foundation for high-performance optoelectronic materials owing to the use of hot electronic photophysics and plasmonic enhancement.