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<p>In this work, we fabricated graphene terahertz detectors with dual-side metallic gate. Detectors using only one set of gates showed a monotonic change in responsivity as gate voltage changed, with a peak value of ~ 12&#xa0;V/W within 0.1 THz, and no distinguishable response above 0.1 THz. The dominating mechanism was found to be the photo-thermoelectric (PTE) effect. Detectors using multiple sets of gates showed monotonic and non-monotonic change in responsivity as gate voltage changed, with peak responsivity of 462&#xa0;V/W at 0.082 THz and 198&#xa0;V/W at 2.52 THz. In the frequency ranges where the responsivity changed monotonically, the dominating mechanism was found to be the PTE effect for frequencies. In the frequency ranges where responsivity changed non-monotonically, the dominating mechanism was found to alternate between the plasmon rectification effect and the PTE effect at different gate voltage. The excitation of graphene plasmons promised non-degrading responsivity below 0.105 THz and at 2.52 THz.</p>

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Broadband Terahertz Detection in Dual-Side Gated Graphene

  • 期刊论文

  • 发表日期：

    2025年6月2日

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  • Songbin Meng,
  • Nianjia Zhang,
  • Xiaokai Pan,
  • Huiping Zhang,
  • Anqi Yu,
  • Xin Sun,
  • Yiming Wang,
  • Yichong Zhang,
  • Yinghao Yuan,
  • Yongni Shao,
  • Alexei V. Balakin,
  • Alexander P. Shkurinov,
  • YiMing Zhu

摘要

In this work, we fabricated graphene terahertz detectors with dual-side metallic gate. Detectors using only one set of gates showed a monotonic change in responsivity as gate voltage changed, with a peak value of ~ 12 V/W within 0.1 THz, and no distinguishable response above 0.1 THz. The dominating mechanism was found to be the photo-thermoelectric (PTE) effect. Detectors using multiple sets of gates showed monotonic and non-monotonic change in responsivity as gate voltage changed, with peak responsivity of 462 V/W at 0.082 THz and 198 V/W at 2.52 THz. In the frequency ranges where the responsivity changed monotonically, the dominating mechanism was found to be the PTE effect for frequencies. In the frequency ranges where responsivity changed non-monotonically, the dominating mechanism was found to alternate between the plasmon rectification effect and the PTE effect at different gate voltage. The excitation of graphene plasmons promised non-degrading responsivity below 0.105 THz and at 2.52 THz.