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<p>This study presents a simple pulsed laser deposition technique (PLD) for the preparation of aluminium gallium nitride (AlGaN) thin film on CdS/Si substrate for double heterojunction solar cell application. A CdS layer was deposited on Si using thermal evaporator system and then AlGaN was grown on CdS/Si using the PLD technique using AlN and GaN targets. The effect of varying the number of laser pulses (300 and 600) and GaN/AlN ratio on structural, optical and morphological properties of the AlGaN thin film was investigated. Structural characterizations by x-ray diffraction revealed (002) plane of AlGaN along with the diffraction peaks of GaN and AlN. The crystallite size of the AlGaN was decreased by increasing the GaN/AlN ratio. Photoluminescence (PL) spectra revealed that the energy band gap of AlGaN was slightly varied between 3.6&#xa0;eV and 3.7&#xa0;eV due to change of the GaN/AlN ratio. Surface roughness of the AlGaN was increased on increasing then laser pulses from 300 to 600 at lower GaN/AlN ratio, whilst it showed opposite trend in the case in which relatively higher ratio was used. Field-emission scanning electron microscopy showed semi-spherical grains of the films whose size was changed by changing the number of laser pulses and also the GaN/AlN ratio. The results of solar cell efficiency indicated a low efficiency (0.454%) of CdS/Si-based solar cell which was significantly improved due to the growth of AlGaN on CdS/Si. Solar cells based on AlGaN/CdS/Si prepared under various were found to be 2.84, 2.50, 2.81 and 2.23%. The solar cell efficiency obtained from the simulation study (2.67, 2.68, 2.89 and 2.90%) was in good agreement with the experimental results. The final phase of the study, increasing the back metal work function improved <i>J</i><sub>sc</sub> and <i>V</i><sub>oc</sub> values, enhancing efficiency. The efficiency of the solar cells significantly increased, reaching 17.99, 18.00, 18.30 and 18.31% to cells 1, 2, 3 and 4 for cells 1, 2, 3 and 4, respectively, at a metal work function of ≈5.2&#xa0;eV. Therefore, the metal work function plays a critical role in solar cell performance, highlighting the importance of proper metal contact to achieve high efficiency.</p>

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Preparation and Simulation of AlGaN/CdS/Si Double Heterojunction for Solar Cell Application

  • 期刊论文

  • 发表日期：

    2025年6月11日

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  • Bashar M. Salih,
  • Asmiet Ramizy,
  • Ethar Yahya Salih,
  • Naveed Afzal,
  • M. H. Eisa,
  • Nazir Mustapha

摘要

This study presents a simple pulsed laser deposition technique (PLD) for the preparation of aluminium gallium nitride (AlGaN) thin film on CdS/Si substrate for double heterojunction solar cell application. A CdS layer was deposited on Si using thermal evaporator system and then AlGaN was grown on CdS/Si using the PLD technique using AlN and GaN targets. The effect of varying the number of laser pulses (300 and 600) and GaN/AlN ratio on structural, optical and morphological properties of the AlGaN thin film was investigated. Structural characterizations by x-ray diffraction revealed (002) plane of AlGaN along with the diffraction peaks of GaN and AlN. The crystallite size of the AlGaN was decreased by increasing the GaN/AlN ratio. Photoluminescence (PL) spectra revealed that the energy band gap of AlGaN was slightly varied between 3.6 eV and 3.7 eV due to change of the GaN/AlN ratio. Surface roughness of the AlGaN was increased on increasing then laser pulses from 300 to 600 at lower GaN/AlN ratio, whilst it showed opposite trend in the case in which relatively higher ratio was used. Field-emission scanning electron microscopy showed semi-spherical grains of the films whose size was changed by changing the number of laser pulses and also the GaN/AlN ratio. The results of solar cell efficiency indicated a low efficiency (0.454%) of CdS/Si-based solar cell which was significantly improved due to the growth of AlGaN on CdS/Si. Solar cells based on AlGaN/CdS/Si prepared under various were found to be 2.84, 2.50, 2.81 and 2.23%. The solar cell efficiency obtained from the simulation study (2.67, 2.68, 2.89 and 2.90%) was in good agreement with the experimental results. The final phase of the study, increasing the back metal work function improved Jsc and Voc values, enhancing efficiency. The efficiency of the solar cells significantly increased, reaching 17.99, 18.00, 18.30 and 18.31% to cells 1, 2, 3 and 4 for cells 1, 2, 3 and 4, respectively, at a metal work function of ≈5.2 eV. Therefore, the metal work function plays a critical role in solar cell performance, highlighting the importance of proper metal contact to achieve high efficiency.