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<p>We propose a polarization-controlled, dual-band VO<sub>2</sub>-based plasmonic switch based on an array of T-shaped nanopillars that is capable of exhibiting a high extinction ratio &gt; 18&#xa0;dB at two operating wavelengths—one in the S-band and the other in the futuristic 2000&#xa0;nm short wave infrared band—such that the wavelength of operation can be selected based on the state of polarization of the incident light. The proposed switch is designed with an array of unit cells with two T-shaped gold nanopillars placed in a face-to-face alignment along their longitudinal axis on a plasmonic substrate coated with a thin layer of vanadium dioxide. On exposure to an external trigger, VO<sub>2</sub> transforms from its semiconducting (VO<sub>2</sub>(S)) to its metallic state (VO<sub>2</sub>(M)). This leads to a change in the reflection spectra, and hence, switching. The proposed switches exhibit an extinction ratio (ER) ~ 19&#xa0;dB at a wavelength of ~ 2030&#xa0;nm when the polarization of the incident light is along the axis parallel to the longitudinal axis of the T-shaped nanostructures and at a wavelength of ~ 1500&#xa0;nm when the incident light is polarized perpendicular to the longitudinal axis of the T-shaped nanostructures. Further, we also demonstrate, using finite difference time domain (FDTD) modelling, that the operating wavelengths can be fine-tuned to the C-, L-, and U- band by varying the geometric parameters of the structure. Thus, the proposed switch can potentially be used for switching in the conventional optical communication band as well as the futuristic short wave infrared band, by controlling the state of polarization of the incident light. Moreover, this switch could be potentially employed in futuristic multispectral imaging devices for the 2000&#xa0;nm band.</p>

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Polarization Controlled, Dual-Band, Active Plasmonic Switch Based on T-Shaped Nanopillars on a VO2-Coated Plasmonic Substrate

  • 期刊论文

  • 发表日期：

    2025年4月29日

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  • Asbah Masih,
  • Yashna Sharma

摘要

We propose a polarization-controlled, dual-band VO2-based plasmonic switch based on an array of T-shaped nanopillars that is capable of exhibiting a high extinction ratio > 18 dB at two operating wavelengths—one in the S-band and the other in the futuristic 2000 nm short wave infrared band—such that the wavelength of operation can be selected based on the state of polarization of the incident light. The proposed switch is designed with an array of unit cells with two T-shaped gold nanopillars placed in a face-to-face alignment along their longitudinal axis on a plasmonic substrate coated with a thin layer of vanadium dioxide. On exposure to an external trigger, VO2 transforms from its semiconducting (VO2(S)) to its metallic state (VO2(M)). This leads to a change in the reflection spectra, and hence, switching. The proposed switches exhibit an extinction ratio (ER) ~ 19 dB at a wavelength of ~ 2030 nm when the polarization of the incident light is along the axis parallel to the longitudinal axis of the T-shaped nanostructures and at a wavelength of ~ 1500 nm when the incident light is polarized perpendicular to the longitudinal axis of the T-shaped nanostructures. Further, we also demonstrate, using finite difference time domain (FDTD) modelling, that the operating wavelengths can be fine-tuned to the C-, L-, and U- band by varying the geometric parameters of the structure. Thus, the proposed switch can potentially be used for switching in the conventional optical communication band as well as the futuristic short wave infrared band, by controlling the state of polarization of the incident light. Moreover, this switch could be potentially employed in futuristic multispectral imaging devices for the 2000 nm band.