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<p>The noble metals such as Ag and Au have traditionally been used to study and develop plasmonic devices. But their excessive loss, particularly in the infrared (IR) and mid-infrared (MIR) regions, necessitates the use of heavily doped semiconductors as viable alternatives. Among promising materials for plasmonics, heavily doped semiconductors, particularly Si and other Gr IV alloys like GeSn, offer tunable plasma frequencies and high-quality plasmonic properties. This paper focuses on the plasma-related properties of Ge<sub>1-x</sub>Sn<sub>x</sub> alloys, where the Sn concentration influences the band structure transition from indirect to direct gap, a feature crucial for optoelectronic devices. We present theoretical models for plasma wavelengths, relaxation times, and complex permittivity of Ge<sub>1-x</sub>Sn<sub>x</sub> alloys with <i>x</i> ranging from 0 to 0.2 and doping concentrations from 10<sup>19</sup> to 10<sup>21</sup>&#xa0;cm<sup>−3</sup>. Our model incorporates multiple scattering mechanisms and the real and imaginary parts of the complex permittivity for both Γ and L valleys. Dispersion curves for SPPs are derived, and the theoretical predictions are supported by simulation results using COMSOL Multiphysics. These findings contribute to the understanding of GeSn as a viable material for future plasmonic applications, especially in the IR and THz regions.</p>

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Degenerate Bulk n-Ge1-xSnx as an Alternative to Noble Metals for Supporting Surface Plasmon Polariton

  • 期刊论文

  • 发表日期：

    2025年4月23日

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  • Pritam Chowdhury,
  • Mousumi Shaw,
  • Shampa Guin,
  • Bratati Mukhopadhyay

摘要

The noble metals such as Ag and Au have traditionally been used to study and develop plasmonic devices. But their excessive loss, particularly in the infrared (IR) and mid-infrared (MIR) regions, necessitates the use of heavily doped semiconductors as viable alternatives. Among promising materials for plasmonics, heavily doped semiconductors, particularly Si and other Gr IV alloys like GeSn, offer tunable plasma frequencies and high-quality plasmonic properties. This paper focuses on the plasma-related properties of Ge1-xSnx alloys, where the Sn concentration influences the band structure transition from indirect to direct gap, a feature crucial for optoelectronic devices. We present theoretical models for plasma wavelengths, relaxation times, and complex permittivity of Ge1-xSnx alloys with x ranging from 0 to 0.2 and doping concentrations from 1019 to 1021 cm−3. Our model incorporates multiple scattering mechanisms and the real and imaginary parts of the complex permittivity for both Γ and L valleys. Dispersion curves for SPPs are derived, and the theoretical predictions are supported by simulation results using COMSOL Multiphysics. These findings contribute to the understanding of GeSn as a viable material for future plasmonic applications, especially in the IR and THz regions.