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<p>A theoretical study of influence of doping on plasmon–phonon gain in donor-doped HgTe/CdHgTe heterostructures with a single HgTe quantum well (QW) under optical excitation conditions was carried out. The dependences of the threshold concentration of nonequilibrium carriers on the concentration of equilibrium electrons in the QW were calculated. The concentration of equilibrium electrons in the QW that corresponds to the minimum threshold excitation power density was found.</p>

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Plasmon-Phonons Gain in Doped CdHgTe/HgTe Narrow-Gap Quantum Well Structures

  • 期刊论文

  • 发表日期：

    2025年4月9日

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  • Vladimir Aleshkin,
  • Artur Rudakov,
  • Sergei Morozov

摘要

A theoretical study of influence of doping on plasmon–phonon gain in donor-doped HgTe/CdHgTe heterostructures with a single HgTe quantum well (QW) under optical excitation conditions was carried out. The dependences of the threshold concentration of nonequilibrium carriers on the concentration of equilibrium electrons in the QW were calculated. The concentration of equilibrium electrons in the QW that corresponds to the minimum threshold excitation power density was found.