Strain-engineered rippling at the bilayer-MoS2 interface identified by advanced atomic force microscopy
摘要
The van der Waals interface structures and behaviors are of great importance in determining the physical properties of two-dimensional atomic crystals and their heterostructures. The delicate interfacial properties are sensitively dependent on the mechanical behaviors of atomically thin films under external strain. Here, we investigated the strain-engineered rippling structures at the CVD-grown bilayer-MoS2 interface with advanced atomic force microscopy (AFM). The in-plane compressive strain is sequentially introduced into the 1L-substrate and 2L-1L interface of bilayer-MoS2 flakes via a fast-cooling process. The thermal strain-engineered rippling structures were directly visualized at the central 2H- and 3R-MoS2 bilayer regions with friction force microscopy (FFM) and bimodal AFM techniques. These rippling structures can be further artificially manipulated into the beating-like rippling features and fully erased via the contact mode AFM scanning. Our results shed lights on the strain-engineered interfacial structures of two-dimensional materials and also inspire the further investigation on the interface engineering of their electronic and optical properties.