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<p>High-performance p-type transistors are a fundamental and arduous challenge for the development of two-dimensional (2D) semiconductors in CMOS integrated circuits. The lack of a p-type modulation strategy that combines high hole transport and excellent stability seriously hinders the development of 2D p-type transistors. Here, we report a spontaneous oxidation intercalation technique for metal/semiconductor contact interfaces, which achieves high hole transport and excellent thermal stability of tungsten diselenide (WSe<sub>2</sub>) transistor. A tungsten oxide (WO<sub><i>x</i></sub>) buffer layer is constructed between the contact interface of metal and WSe<sub>2</sub> by spontaneous oxidation after plasma etching. This metal-WO<sub><i>x</i></sub>-WSe<sub>2</sub> contact interface enhances hole transport and significantly reduces the contact resistance by 10<sup>3</sup>. Furthermore, the WO<sub><i>x</i></sub> buffer layer with high thermal stability ensures that the WSe<sub>2</sub> transistor maintains almost non decaying p-type characteristics even after long-term annealing up to 400°C, meeting the thermal budget for back-end-of-line integration. This contact strategy is compatible with silicon-based processes and has been successfully applied to the construction of homogeneous WSe<sub>2</sub> CMOS inverters.</p>

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Ultrahigh thermal-stable p-type WSe2 transistors with silicon processing-compatible metal-semiconductor contacts

  • 期刊论文

  • 发表日期：

    2026年1月7日

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  • Junlin Huang,
  • Li Gao,
  • Zhangyi Chen,
  • Zeen Jia,
  • Yuyin Lin,
  • Mengyu Hong,
  • Huihui Yu,
  • Xiankun Zhang,
  • Zheng Zhang,
  • Yue Zhang

摘要

High-performance p-type transistors are a fundamental and arduous challenge for the development of two-dimensional (2D) semiconductors in CMOS integrated circuits. The lack of a p-type modulation strategy that combines high hole transport and excellent stability seriously hinders the development of 2D p-type transistors. Here, we report a spontaneous oxidation intercalation technique for metal/semiconductor contact interfaces, which achieves high hole transport and excellent thermal stability of tungsten diselenide (WSe2) transistor. A tungsten oxide (WOx) buffer layer is constructed between the contact interface of metal and WSe2 by spontaneous oxidation after plasma etching. This metal-WOx-WSe2 contact interface enhances hole transport and significantly reduces the contact resistance by 103. Furthermore, the WOx buffer layer with high thermal stability ensures that the WSe2 transistor maintains almost non decaying p-type characteristics even after long-term annealing up to 400°C, meeting the thermal budget for back-end-of-line integration. This contact strategy is compatible with silicon-based processes and has been successfully applied to the construction of homogeneous WSe2 CMOS inverters.