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<p>In this paper, the composite graded-AlGaN/graded-InGaN high electron mobility transistors (CG-HEMTs) are reported with high linearity and high power. In order to broaden the electron distribution, the graded-AlGaN barrier and graded-InGaN channel layer are combined. Thus, the wider gate voltage swing (GVS) is realized. At the same time, due to the two graded layers, the centroid of 3DEG in CG-HEMTs is located in the middle of the two graded layers. Thus, the centroid of 3DEG of the CG-HEMTs is kept away from both the high Al component and the high In component. The random alloy scattering of charge carriers is reduced. This is why the mobility of the CG-HEMTs is higher. While the transconductance (<i>g</i><sub>m</sub>) of CG-HEMTs is broadened, the peak <i>g</i><sub>m</sub> of the CG-HEMTs is higher because of the high mobility. In order to achieve high power, the high Al component graded-AlGaN (40%–0%) is grown to enhance polarization. Ultimately, the 4 V of GVS, 260 mS/mm, and 1370 mA/mm are achieved by the CG-HEMTs. At 3.6 GHz, the 6.2 W/mm of output power density (<i>P</i><sub>out</sub>) and 55% of power-added efficiency (PAE) are realized. The output third-order intercept point (OIP3) of the CG-HEMTs is 40.9 dBm, which is the highest OIP3 ever reported.</p>

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High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs

  • 期刊论文

  • 发表日期：

    2026年1月4日

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  • Qian Yu,
  • Ling Yang,
  • Long Zhang,
  • Chunzhou Shi,
  • Bin Hou,
  • Mei Wu,
  • Meng Zhang,
  • Hao Lu,
  • Xu Zou,
  • Wenze Gao,
  • Xiaohua Ma,
  • Yue Hao

摘要

In this paper, the composite graded-AlGaN/graded-InGaN high electron mobility transistors (CG-HEMTs) are reported with high linearity and high power. In order to broaden the electron distribution, the graded-AlGaN barrier and graded-InGaN channel layer are combined. Thus, the wider gate voltage swing (GVS) is realized. At the same time, due to the two graded layers, the centroid of 3DEG in CG-HEMTs is located in the middle of the two graded layers. Thus, the centroid of 3DEG of the CG-HEMTs is kept away from both the high Al component and the high In component. The random alloy scattering of charge carriers is reduced. This is why the mobility of the CG-HEMTs is higher. While the transconductance (gm) of CG-HEMTs is broadened, the peak gm of the CG-HEMTs is higher because of the high mobility. In order to achieve high power, the high Al component graded-AlGaN (40%–0%) is grown to enhance polarization. Ultimately, the 4 V of GVS, 260 mS/mm, and 1370 mA/mm are achieved by the CG-HEMTs. At 3.6 GHz, the 6.2 W/mm of output power density (Pout) and 55% of power-added efficiency (PAE) are realized. The output third-order intercept point (OIP3) of the CG-HEMTs is 40.9 dBm, which is the highest OIP3 ever reported.