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<p>Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have emerged as promising materials for extending Moore’s law owing to their dangling bond-free surface, ultrathin structure, high mobility, and tunable bandgap similar to silicon. To achieve their large-scale integration, the batch-controllable fabrication of wafer-scale films suitable for industrial applications is crucial. To this end, we developed a cost-effective multitube atmospheric-pressure chemical vapor deposition setup for successfully fabricating high-quality wafer-scale monolayer MoS<sub>2</sub> films on sapphire substrates. Characterization results show that the monolayer MoS<sub>2</sub> films exhibit uniform physical dimensions, a high-quality crystal structure, and excellent nonlinear optical properties. Furthermore, we revealed the regulatory effects of carrier-gas flow and viscous flow behavior on crystal quality during the film growth process. Then, monolayer-MoS<sub>2</sub>-based ferroelectric field-effect transistors were assembled, which exhibited an outstanding current modulation ratio exceeding 10<sup>6</sup> and reliable electrical characteristics. This study provides an efficient and convenient solution for advancing the standardization of 2D material research, laying the foundation for the fabrication of large-scale integrated circuits and flexible electronics based on MoS<sub>2</sub>.</p>

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Wafer-scale fabrication of monolayer MoS2 films for two-dimensional electronic devices via multitube atmospheric-pressure chemical vapor deposition

  • 期刊论文

  • 发表日期：

    2025年9月23日

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  • Zixuan Cheng,
  • Dingyi Yang,
  • Yong Wang,
  • Yizhang Wu,
  • Biao Wu,
  • Jiateng Zhang,
  • Huan Liu,
  • Mingwen Zhang,
  • Xuetao Gan,
  • Yan Liu,
  • Yue Hao,
  • Genquan Han

摘要

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have emerged as promising materials for extending Moore’s law owing to their dangling bond-free surface, ultrathin structure, high mobility, and tunable bandgap similar to silicon. To achieve their large-scale integration, the batch-controllable fabrication of wafer-scale films suitable for industrial applications is crucial. To this end, we developed a cost-effective multitube atmospheric-pressure chemical vapor deposition setup for successfully fabricating high-quality wafer-scale monolayer MoS2 films on sapphire substrates. Characterization results show that the monolayer MoS2 films exhibit uniform physical dimensions, a high-quality crystal structure, and excellent nonlinear optical properties. Furthermore, we revealed the regulatory effects of carrier-gas flow and viscous flow behavior on crystal quality during the film growth process. Then, monolayer-MoS2-based ferroelectric field-effect transistors were assembled, which exhibited an outstanding current modulation ratio exceeding 106 and reliable electrical characteristics. This study provides an efficient and convenient solution for advancing the standardization of 2D material research, laying the foundation for the fabrication of large-scale integrated circuits and flexible electronics based on MoS2.