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<p>Two-dimensional (2D) materials hold remarkable promise for high-density memory applications, yet precise modulation of interface properties in van der Waals (vdW) tunnel junctions remains a critical challenge. In this work, we systematically investigate the interface contact and charge transport properties of <i>MAX</i><sub>3</sub>-based vdW tunnel junctions (<i>M</i> = Mn, Ni; <i>A</i> = Si, Ge; <i>X</i> = S, Se). Our findings demonstrate that controlled sliding between atomic layers enables deterministic regulation of both the Schottky barrier height and magnetic moment orientation, driven by layer-dependent charge redistribution at selenium-terminated interfaces. First-principles calculations combined with non-equilibrium Green’s function simulations reveal substantial improvements in tunneling resistance (∼6 × 10<sup>5</sup>%) and tunneling magnetoresistance (∼10<sup>10</sup>%) achieved through interface engineering. These results provide a general strategy for tailoring quantum transport in 2D vdW heterostructures, offering a versatile platform for reconfigurable memory devices with atomic-scale precision.</p>

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Sliding-controllable on-off states in MAX3-based (M = Mn, Ni; A = Si, Ge; X = S, Se) van der Waals tunnel junctions

  • 期刊论文

  • 发表日期：

    2026年1月4日

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  • Jianing Tan,
  • Meng Ge,
  • Huamin Hu,
  • Hai Li,
  • Gang Ouyang

摘要

Two-dimensional (2D) materials hold remarkable promise for high-density memory applications, yet precise modulation of interface properties in van der Waals (vdW) tunnel junctions remains a critical challenge. In this work, we systematically investigate the interface contact and charge transport properties of MAX3-based vdW tunnel junctions (M = Mn, Ni; A = Si, Ge; X = S, Se). Our findings demonstrate that controlled sliding between atomic layers enables deterministic regulation of both the Schottky barrier height and magnetic moment orientation, driven by layer-dependent charge redistribution at selenium-terminated interfaces. First-principles calculations combined with non-equilibrium Green’s function simulations reveal substantial improvements in tunneling resistance (∼6 × 105%) and tunneling magnetoresistance (∼1010%) achieved through interface engineering. These results provide a general strategy for tailoring quantum transport in 2D vdW heterostructures, offering a versatile platform for reconfigurable memory devices with atomic-scale precision.