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<p>Hafnium oxide-based materials have recently emerged as a promising ferroelectric (FE) material in the field of non-volatile memory due to their compatibility with CMOS processes and high-density integration potential. However, it is well known that hafnium-based ferroelectric materials have a large coercive field and a small breakdown field, resulting in insufficient endurance. Therefore, there is a growing need to optimize the endurance of hafnium-based ferroelectric materials while maintaining a large remanent polarization. In this paper, metal-ferroelectric-metal (MFM) capacitors with low operating voltage below 1 V and high reliability have been successfully demonstrated using 5 nm hafnium zirconium oxide (HZO) films optimized by lanthanum-doping. The 5 nm La-doped HZO (La:HZO, 1:7) capacitor exhibits a higher proportion of the ferroelectric orthorhombic phase than that of the non-doped HZO capacitor, leading to a low operating voltage of 1 V with high doubled remanent polarization (2<i>P</i><sub>r</sub>) over 30 µC/cm<sup>2</sup>. In addition, La-doping effectively addresses the issue of elevated leakage current density in 5 nm HZO capacitor, so that 5 nm La:HZO capacitor demonstrates a significantly higher breakdown field strength. Owing to lower operating voltage and higher breakdown field, a La:HZO ferroelectric capacitor with a robust endurance of 3 × 10<sup>11</sup> has also been achieved. The reliability of our La:HZO ferroelectric capacitor shows the optimal overall performance among previous ferroelectric capacitors.</p>

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Improvement with low operation voltage in ultrathin La-doped Hf0.5Zr0.5O2 ferroelectric capacitors

  • 期刊论文

  • 发表日期：

    2025年5月20日

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  • Min Zeng,
  • Shiwei Yan,
  • Shiyuan Liu,
  • Tianyue Fu,
  • Honggang Liu,
  • Qianlan Hu,
  • Yanqing Wu

摘要

Hafnium oxide-based materials have recently emerged as a promising ferroelectric (FE) material in the field of non-volatile memory due to their compatibility with CMOS processes and high-density integration potential. However, it is well known that hafnium-based ferroelectric materials have a large coercive field and a small breakdown field, resulting in insufficient endurance. Therefore, there is a growing need to optimize the endurance of hafnium-based ferroelectric materials while maintaining a large remanent polarization. In this paper, metal-ferroelectric-metal (MFM) capacitors with low operating voltage below 1 V and high reliability have been successfully demonstrated using 5 nm hafnium zirconium oxide (HZO) films optimized by lanthanum-doping. The 5 nm La-doped HZO (La:HZO, 1:7) capacitor exhibits a higher proportion of the ferroelectric orthorhombic phase than that of the non-doped HZO capacitor, leading to a low operating voltage of 1 V with high doubled remanent polarization (2Pr) over 30 µC/cm2. In addition, La-doping effectively addresses the issue of elevated leakage current density in 5 nm HZO capacitor, so that 5 nm La:HZO capacitor demonstrates a significantly higher breakdown field strength. Owing to lower operating voltage and higher breakdown field, a La:HZO ferroelectric capacitor with a robust endurance of 3 × 1011 has also been achieved. The reliability of our La:HZO ferroelectric capacitor shows the optimal overall performance among previous ferroelectric capacitors.