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<p>Two-dimensional van der Waals (2D vdW) semiconductors have proven to be of great importance for flexible thin-film transistors (TFTs) owing to their intrinsic mechanical flexibility and superior electronic properties. In particular, bismuth oxyselenide (Bi<sub>2</sub>O<sub>2</sub>Se), featuring ultrahigh electron mobility along with facile scalable thin-film growth methods, could offer a new option to deliver massively enhanced potential for flexible TFTs. However, it has remained a challenge to achieve nonvolatile flexible memory devices based on Bi<sub>2</sub>O<sub>2</sub>Se TFTs, thereby hindering the extension of Bi<sub>2</sub>O<sub>2</sub>Se TFTs to storage and emerging neuromorphic computing applications. Here, a flexible synaptic TFT is demonstrated through the creation of a Bi<sub>2</sub>O<sub>2</sub>Se-based ferroelectric field-effect transistor (FeFET) structure on the flexible mica substrate. The proposed device exhibits excellent nonvolatile memory characteristics, including a large memory window, excellent current modulation ratio, great retention, and strong endurance. Furthermore, the Bi<sub>2</sub>O<sub>2</sub>Se-based FeFET can be operated as a synaptic device with analog conductance-modulating behaviors. Owing to the superior mechanical flexibility of the component materials and the mica substrate, the Bi<sub>2</sub>O<sub>2</sub>Se-based FeFETs can retain their performance against various bending states, showing a strain-invariant electrical performance. This study marks the advancement of Bi<sub>2</sub>O<sub>2</sub>Se-based TFTs toward flexible nonvolatile memories and synaptic devices.</p>

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Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors

  • 期刊论文

  • 发表日期：

    2025年4月17日

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  • Jie Wen,
  • Fei Xiao,
  • Zheng-Dong Luo,
  • Dongxin Tan,
  • Xuetao Gan,
  • Dawei Zhang,
  • Zhufei Chu,
  • Yinshui Xia,
  • Yan Liu,
  • Genquan Han

摘要

Two-dimensional van der Waals (2D vdW) semiconductors have proven to be of great importance for flexible thin-film transistors (TFTs) owing to their intrinsic mechanical flexibility and superior electronic properties. In particular, bismuth oxyselenide (Bi2O2Se), featuring ultrahigh electron mobility along with facile scalable thin-film growth methods, could offer a new option to deliver massively enhanced potential for flexible TFTs. However, it has remained a challenge to achieve nonvolatile flexible memory devices based on Bi2O2Se TFTs, thereby hindering the extension of Bi2O2Se TFTs to storage and emerging neuromorphic computing applications. Here, a flexible synaptic TFT is demonstrated through the creation of a Bi2O2Se-based ferroelectric field-effect transistor (FeFET) structure on the flexible mica substrate. The proposed device exhibits excellent nonvolatile memory characteristics, including a large memory window, excellent current modulation ratio, great retention, and strong endurance. Furthermore, the Bi2O2Se-based FeFET can be operated as a synaptic device with analog conductance-modulating behaviors. Owing to the superior mechanical flexibility of the component materials and the mica substrate, the Bi2O2Se-based FeFETs can retain their performance against various bending states, showing a strain-invariant electrical performance. This study marks the advancement of Bi2O2Se-based TFTs toward flexible nonvolatile memories and synaptic devices.