Multi-wavelength plasmonic optoelectronic memristor for reconfigurable logic operations and mixed-color pattern recognition

Optoelectronic memristors have emerged as promising hardware platforms for highly efficient image perception owing to their low crosstalk, fast response, and low power consumption. However, the development of optoelectronic memristors with multi-wavelength recognition capabilities remains constrained by the limitations of their inherent bandgap. In this work, a multi-wavelength-modulated optoelectronic memristor that operates based on the localized surface plasmon resonance effect is developed using silver (Ag)-titanium dioxide (TiO₂)/polymethyl methacrylate (PMMA) nanocomposites. The SET voltage can be gradually reduced by modulating the optical wavelength of visible irradiation. On this basis, reconfigurable IMP and False logic operations have been implemented in the memristive logic circuit. The neuromorphic visual preprocessing and recognition function for mixed-color patterns is demonstrated based on wavelength-dependent resistive switching behaviors. The proposed optoelectronic memristor enables high-density storage and in-memory computing.