Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic
摘要
A MoS2 channel FeFET with a P–Si gate was developed for use as a photosensor with a memory function. A current ratio of 104 was achieved at an irradiation power of 20 nW. The reliability of the device was evaluated by means of endurance tests, and a retention time of more than 1000 s was observed. Furthermore, in-sensor digital computing was verified by applying an optoelectronic hybrid logic AND gate. This novel optical sensing principle enables the development of new approaches for optoelectronic hybrid integration.