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<p>Optoelectronic synaptic devices operating at high temperatures have application potential across many important fields, including the aerospace and defense industries. However, limited research exists on such devices. Herein, we fabricate 4H-SiC-based high-temperature optoelectronic synaptic devices that are capable of achieving diverse synaptic functionalities at temperatures as high as 600 K. The synaptic functionalities are realized for these devices through carrier capture and release of the deep-level defects introduced via electronic irradiation. A 3 × 3 array of high-temperature optoelectronic synaptic devices enables the image memory functions. A neural network model constructed using this array addresses the issue of color quantization. The optoelectronic synaptic devices thus developed are capable of high-temperature applications.</p>

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High-temperature optoelectronic synaptic devices based on 4H-SiC

  • 期刊论文

  • 发表日期：

    2025年2月26日

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  • Mingxuan Bu,
  • Yue Wang,
  • Zhenyi Ni,
  • Dongke Li,
  • Deren Yang,
  • Xiaodong Pi

摘要

Optoelectronic synaptic devices operating at high temperatures have application potential across many important fields, including the aerospace and defense industries. However, limited research exists on such devices. Herein, we fabricate 4H-SiC-based high-temperature optoelectronic synaptic devices that are capable of achieving diverse synaptic functionalities at temperatures as high as 600 K. The synaptic functionalities are realized for these devices through carrier capture and release of the deep-level defects introduced via electronic irradiation. A 3 × 3 array of high-temperature optoelectronic synaptic devices enables the image memory functions. A neural network model constructed using this array addresses the issue of color quantization. The optoelectronic synaptic devices thus developed are capable of high-temperature applications.