Strong phonon scattering and suppressed thermal transport induced by oxygen vacancy in β-Ga2O3 elucidated via machine learning
摘要
Accurate evaluation of high-order anharmonic interactions in complex crystalline systems requires prohibitively large computational resources, limiting mechanistic insight into defect scattering and the resulting suppression of thermal conductivity in β-Ga2O3. In this study, machine learning-accelerated first-principles calculations were used to evaluate both harmonic and anharmonic phonon properties over a broad range. This approach incorporates both phonon-phonon and defect scattering within a unified framework. Oxygen vacancies lead to a pronounced phonon redshift, a sharp reduction in phonon group velocity, and a substantial decrease in phonon lifetime, collectively indicating strong defect-induced phonon scattering. As the vacancy concentration increases, phonon frequencies and lifetimes exhibit an approximately linear downward trend. Concurrently, the available phase space and anharmonic matrix elements associated with low-frequency phonon scattering are enhanced. These combined effects result in a rapid suppression of the lattice thermal conductivity and phonon mean free path, particularly in the low-frequency transport regime. This study not only avoids the theoretical limitations associated with calculating high-order anharmonic terms but also systematically quantifies the degradation of thermal conductivity with increasing vacancy concentration, thereby elucidating the microscopic mechanisms governing defect-induced anharmonicity and advancing the understanding of anharmonic lattice dynamics in β-Ga2O3.