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<p>In recent years, co-doping has gained widespread attention with the advantages of higher solubility, more carrier concentration, etc. Although more impurity energy levels will be introduced by co-doping, this can be in favor of appropriate application in the memory-effect device instead. Herein, the In and Sn co-doped gallium oxide (InSn-Ga<sub>2</sub>O<sub>3</sub>) film has been successfully grown on sapphire substrates using plasma-enhanced chemical vapor deposition technology. Compared with pure Ga<sub>2</sub>O<sub>3</sub>, InSn-Ga<sub>2</sub>O<sub>3</sub> exhibits a significantly increased carrier concentration and numerous defects, and thus results in a slow carrier recombination process and a prolonged recovery time after illumination, which endows InSn-Ga<sub>2</sub>O<sub>3</sub> with a certain memory function. Moreover, the first-principles calculation is utilized to analyze band structure evolution after the In and Sn co-doping, indicating the positive impact of multiple shallow impurity energy levels on improving conductivity and extending the recombination time of the photo-generated carriers in the InSn-Ga<sub>2</sub>O<sub>3</sub> device. In all, this work demonstrates superior memory characteristics of Ga<sub>2</sub>O<sub>3</sub> after co-doping operation and expands the potential applications of Ga<sub>2</sub>O<sub>3</sub> in optoelectronic synapses and image storage devices.</p>

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Co-doping improves memory characteristics in InSn-Ga2O3 detector via multiple impurity energy levels

  • 期刊论文

  • 发表日期：

    2025年9月24日

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  • Min Li,
  • Sihan Yan,
  • Muzi Li,
  • Zhaoying Xi,
  • Shan Li,
  • Zhang Zhang,
  • Meng Xu,
  • Lili Yang,
  • Weihua Tang

摘要

In recent years, co-doping has gained widespread attention with the advantages of higher solubility, more carrier concentration, etc. Although more impurity energy levels will be introduced by co-doping, this can be in favor of appropriate application in the memory-effect device instead. Herein, the In and Sn co-doped gallium oxide (InSn-Ga2O3) film has been successfully grown on sapphire substrates using plasma-enhanced chemical vapor deposition technology. Compared with pure Ga2O3, InSn-Ga2O3 exhibits a significantly increased carrier concentration and numerous defects, and thus results in a slow carrier recombination process and a prolonged recovery time after illumination, which endows InSn-Ga2O3 with a certain memory function. Moreover, the first-principles calculation is utilized to analyze band structure evolution after the In and Sn co-doping, indicating the positive impact of multiple shallow impurity energy levels on improving conductivity and extending the recombination time of the photo-generated carriers in the InSn-Ga2O3 device. In all, this work demonstrates superior memory characteristics of Ga2O3 after co-doping operation and expands the potential applications of Ga2O3 in optoelectronic synapses and image storage devices.