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<p>Herein, a series of highly planar, rigid electron-deficient building blocks, including fused-bisthienoisoindigo (<b>M1</b>), fluorinated fused-bisthienoisoindigo (<b>M2</b>), and fused-bisazathienoisoindigo (<b>M3</b>) was synthesized. Based on these blocks, three donor-acceptor (D-A) conjugated polymers (namely, <b>P1–P3</b>) were further developed. Owing to the incorporation of fused thieno[3,2-<i>b</i>]thiophene moieties, these building blocks exhibit extremely small intramolecular steric hindrance. Additionally, the introduction of fluorine and nitrogen atoms in <b>M2</b> and <b>M3</b> results in successively reduced steric hindrance along conjugated backbones. Consequently, the backbone planarity of the three polymers obviously increases from <b>P1</b> to <b>P3</b>. Among them, <b>P3</b> demonstrated the optimal ambipolar charge transport properties in field-effect transistors, with hole and electron mobilities of 0.71 and 1.00 cm<sup>2</sup>/(V s), respectively, which is well consistent with its highly ordered thin film microstructure characteristic. Our results highlight the potential of these fused-bisthienoisoindigo in constructing high-performance polymer semiconductors.</p>

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Fused bisthienoisoindigos: highly planar and rigid electron-deficient building blocks for polymer semiconductors in organic electronics

  • 期刊论文

  • 发表日期：

    2026年1月4日

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  • Zhihui Chen,
  • Xuyang Wei,
  • Weifeng Zhang,
  • Hao Luo,
  • Shuai Yang,
  • Qian Che,
  • Gui Yu

摘要

Herein, a series of highly planar, rigid electron-deficient building blocks, including fused-bisthienoisoindigo (M1), fluorinated fused-bisthienoisoindigo (M2), and fused-bisazathienoisoindigo (M3) was synthesized. Based on these blocks, three donor-acceptor (D-A) conjugated polymers (namely, P1–P3) were further developed. Owing to the incorporation of fused thieno[3,2-b]thiophene moieties, these building blocks exhibit extremely small intramolecular steric hindrance. Additionally, the introduction of fluorine and nitrogen atoms in M2 and M3 results in successively reduced steric hindrance along conjugated backbones. Consequently, the backbone planarity of the three polymers obviously increases from P1 to P3. Among them, P3 demonstrated the optimal ambipolar charge transport properties in field-effect transistors, with hole and electron mobilities of 0.71 and 1.00 cm2/(V s), respectively, which is well consistent with its highly ordered thin film microstructure characteristic. Our results highlight the potential of these fused-bisthienoisoindigo in constructing high-performance polymer semiconductors.