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<p>Indium nitride (InN) is regarded for its excellent electronic transport properties and broad spectral absorption; however, its photoelectrochemical (PEC) efficiency is hindered by high charge recombination rates and sluggish water oxidation kinetics. Herein, reduced graphene oxide (rGO) has been introduced as an interfacial layer to address these challenges within the InN heterojunction. The incorporation of rGO reduces the impedance at the InN/PM6 interface, significantly enhancing charge separation. This modification shifts the energy band modulation from a Z-scheme to a type-II configuration, accelerating the kinetics of oxygen evolution reaction (OER), as further supported by theoretical calculations. The heterojunction photoanode exhibits a remarkable 22-fold increase in photocurrent density and an astonishing 50-fold enhancement in applied bias photon-to-current efficiency (ABPE) compared to pure InN. Additionally, the enhanced photoanode demonstrates outstanding long-term stability in alkaline environments, with hydrogen and oxygen production rates reaching 2.56 and 1.28 µmol/min, respectively. This work highlights the transformative potential of rGO in modulating energy band structure, extending its application across a wide range of systems and underscoring its significant promise for advancing artificial photosynthesis technologies.</p>

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Realizing synergistic catalysis in solar water splitting through reduced graphene oxide enhanced InN heterojunctions

  • 期刊论文

  • 发表日期：

    2025年3月19日

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  • Shaohua Xie,
  • Jiaying Xiao,
  • Jiehui Liang,
  • Xiangrong Li,
  • Junkun Wang,
  • Yanling Wang,
  • Jiaxi Li,
  • Wenliang Wang,
  • Guoqiang Li

摘要

Indium nitride (InN) is regarded for its excellent electronic transport properties and broad spectral absorption; however, its photoelectrochemical (PEC) efficiency is hindered by high charge recombination rates and sluggish water oxidation kinetics. Herein, reduced graphene oxide (rGO) has been introduced as an interfacial layer to address these challenges within the InN heterojunction. The incorporation of rGO reduces the impedance at the InN/PM6 interface, significantly enhancing charge separation. This modification shifts the energy band modulation from a Z-scheme to a type-II configuration, accelerating the kinetics of oxygen evolution reaction (OER), as further supported by theoretical calculations. The heterojunction photoanode exhibits a remarkable 22-fold increase in photocurrent density and an astonishing 50-fold enhancement in applied bias photon-to-current efficiency (ABPE) compared to pure InN. Additionally, the enhanced photoanode demonstrates outstanding long-term stability in alkaline environments, with hydrogen and oxygen production rates reaching 2.56 and 1.28 µmol/min, respectively. This work highlights the transformative potential of rGO in modulating energy band structure, extending its application across a wide range of systems and underscoring its significant promise for advancing artificial photosynthesis technologies.