Scholarlink

Background <p>Redistribution Cu interconnect is a key enabler for heterogeneous integration of chiplets for high-performance computing. Objective: The high-density integration of dissimilar materials in the chiplet package significantly increases stress and the risk of failure. It is therefore critical to understand the inelastic behavior of the Cu interconnect to accurately assess stress and damage accumulation.</p> Methods <p>To evaluate Cu behavior under realistic dimensions and boundary conditions, this study conducted tensile tests on a redistribution interconnect strip specimen with parallel micron-scale Cu traces encapsulated in polyimide (PI) dielectric, rather than a single Cu line or thin film. Results: The experimental results showed that the yield stress of the Cu trace is higher than that of its bulk form. Additionally, the Cu trace exhibits strong rate-dependent inelastic behavior before fracture.</p> Conclusions <p>The time- and temperature-dependent inelastic behavior of the micron-scale Cu traces was considered by using the Anand viscoplastic model. The model parameters were obtained by using a modified rule-of-mixture procedure and validated against the experimental results. The model can be applied in numerical simulations of complex chiplet packages to evaluate stresses and reliability risks of the interconnect structure.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Characterization of the Viscoplastic Constitutive Behavior of Copper Trace Used in Microelectronic Interconnect

  • 期刊论文

  • 发表日期：

    2026年8月3日

查看全文
  • Z.-Y. Huang,
  • T.-C. Chiu

摘要

Background

Redistribution Cu interconnect is a key enabler for heterogeneous integration of chiplets for high-performance computing. Objective: The high-density integration of dissimilar materials in the chiplet package significantly increases stress and the risk of failure. It is therefore critical to understand the inelastic behavior of the Cu interconnect to accurately assess stress and damage accumulation.

Methods

To evaluate Cu behavior under realistic dimensions and boundary conditions, this study conducted tensile tests on a redistribution interconnect strip specimen with parallel micron-scale Cu traces encapsulated in polyimide (PI) dielectric, rather than a single Cu line or thin film. Results: The experimental results showed that the yield stress of the Cu trace is higher than that of its bulk form. Additionally, the Cu trace exhibits strong rate-dependent inelastic behavior before fracture.

Conclusions

The time- and temperature-dependent inelastic behavior of the micron-scale Cu traces was considered by using the Anand viscoplastic model. The model parameters were obtained by using a modified rule-of-mixture procedure and validated against the experimental results. The model can be applied in numerical simulations of complex chiplet packages to evaluate stresses and reliability risks of the interconnect structure.