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<p>Reactive Ti/Cu co-deposition onto Pt(111) in 50 mbar O<sub>2</sub> is investigated with X-ray photoelectron spectroscopy (XPS), electron diffraction (LEED) and low-temperature scanning tunneling microscopy (STM). While as-grown films develop homogenous Ti/Cu/O mixtures without crystalline order, already moderate oxygen annealing at 560&#xa0;K initiates a massive phase separation into surface TiO<sub>2</sub> and interface Cu<sub>2</sub>O layers. At low Ti content, Ti decorates the nano-pyramidal reconstruction of the Cu<sub>2</sub>O(111) surface, replacing the regular Cu<sub>4</sub>O pyramids with TiO<sub>x</sub> units. At higher concentration, raft-like TiO<sub>2</sub> crystallites, exposing a (4 × 2) added-row reconstruction, grow on top of the Cu<sub>2</sub>O films. A nearly equal Ti/Cu ratio triggers the formation of a <i>pn</i>-junction, made of n-type TiO<sub>2</sub> at the surface and p-type Cu<sub>2</sub>O at the interface. Our work rationalizes the absence of Ti/Cu mixed oxide phases and discusses the driving forces for phase separation into the binary oxide parents.</p>

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Titanium-Doped Cu2O Thin Films: Oxide Alloying Versus Phase Separation

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月29日

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  • Bo-Yi Zhong,
  • Niklas Nilius

摘要

Reactive Ti/Cu co-deposition onto Pt(111) in 50 mbar O2 is investigated with X-ray photoelectron spectroscopy (XPS), electron diffraction (LEED) and low-temperature scanning tunneling microscopy (STM). While as-grown films develop homogenous Ti/Cu/O mixtures without crystalline order, already moderate oxygen annealing at 560 K initiates a massive phase separation into surface TiO2 and interface Cu2O layers. At low Ti content, Ti decorates the nano-pyramidal reconstruction of the Cu2O(111) surface, replacing the regular Cu4O pyramids with TiOx units. At higher concentration, raft-like TiO2 crystallites, exposing a (4 × 2) added-row reconstruction, grow on top of the Cu2O films. A nearly equal Ti/Cu ratio triggers the formation of a pn-junction, made of n-type TiO2 at the surface and p-type Cu2O at the interface. Our work rationalizes the absence of Ti/Cu mixed oxide phases and discusses the driving forces for phase separation into the binary oxide parents.