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<p>This paper is proposed a tunable opto-thermal sensor for ultra -high temperature-sensing by developing a one-dimensional (1-D) photonic crystal (PC) structure of alternating layers of Silicon-Dioxide (SiO₂), Titanium-Dioxide (TiO₂) and integrated with a single defect layer of Hafnium-Dioxide (HfO₂) based on the thermo-optic response. The materials are chosen by their unique optical and thermal behaviour especially dielectric properties, absorption loss and melting point of the materials. The sensor is analysed under high-temperature variations, where the RI changes induced by heating directly. The photonic band gap (PBG)is created by the RI variation of the periodic materials. The HfO₂ defect layer enables a sharp resonance peak within the PBG, significantly improving the detection capability of temperature in terms of RI. The optical and thermal behaviour of the proposed 1-D PC is modelled using the Transfer Matrix Method by python computation. Transmissions and reflections spectra are computed numerically and the significance performance of the sensor are plotted such as defect layer thickness variation (− 3% to + 3%), Quality Factor (Q-factor), sensitivity and evaluated the numerical value. To enhance the sensing accuracy, the defect-layer thickness is optimized and the calculated Q-Factor is increased from 520.5858 to 522.8969 for the thickness variation 0% to -3%. The PC demonstrates a high average sensitivity 0.143&#xa0;nm/°C, indicating a substantial shift in resonance wavelength with the variation temperature. The results confirm that the SiO₂–TiO₂ periodic structure, combined with an optimized HfO₂ defect layer, provides a robust, thermally stable, and highly responsive platform for high-temperature PC sensing applications.</p>

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Highly Sensitive Tunable Opto-Thermal Sensor Based on Optimized HfO2 Defect Layer in 1D Photonic Crystal for Ultra-high Temperature Sensing

  • 期刊论文

  • 发表日期：

    2026年5月16日

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  • Barnali Pal,
  • Bibhatsu Kuiri,
  • Binoy Das,
  • Ardhendu Sekhar Patra

摘要

This paper is proposed a tunable opto-thermal sensor for ultra -high temperature-sensing by developing a one-dimensional (1-D) photonic crystal (PC) structure of alternating layers of Silicon-Dioxide (SiO₂), Titanium-Dioxide (TiO₂) and integrated with a single defect layer of Hafnium-Dioxide (HfO₂) based on the thermo-optic response. The materials are chosen by their unique optical and thermal behaviour especially dielectric properties, absorption loss and melting point of the materials. The sensor is analysed under high-temperature variations, where the RI changes induced by heating directly. The photonic band gap (PBG)is created by the RI variation of the periodic materials. The HfO₂ defect layer enables a sharp resonance peak within the PBG, significantly improving the detection capability of temperature in terms of RI. The optical and thermal behaviour of the proposed 1-D PC is modelled using the Transfer Matrix Method by python computation. Transmissions and reflections spectra are computed numerically and the significance performance of the sensor are plotted such as defect layer thickness variation (− 3% to + 3%), Quality Factor (Q-factor), sensitivity and evaluated the numerical value. To enhance the sensing accuracy, the defect-layer thickness is optimized and the calculated Q-Factor is increased from 520.5858 to 522.8969 for the thickness variation 0% to -3%. The PC demonstrates a high average sensitivity 0.143 nm/°C, indicating a substantial shift in resonance wavelength with the variation temperature. The results confirm that the SiO₂–TiO₂ periodic structure, combined with an optimized HfO₂ defect layer, provides a robust, thermally stable, and highly responsive platform for high-temperature PC sensing applications.