This paper aims to evaluate the suitability of Ground Plane Embedded Fully Depleted (FD-SOI-GP) MOSFET and compare it with the conventional FD-SOI-MOSFET as a UV sensor. Exhaustive simulations have been performed to validate the device’s sensitivity under different operating conditions and parameters utilizing Silvaco TCAD device software. The performance of the devices is assessed based on the drain current (IDS), sensitivity, and detectivity. The channel thickness ( \(\:{t}_{channel}\) ) and the operating temperature has also been varied to assess the device performance. The recorded data shows that the observed change in the sensitivity with \(\:{t}_{channel}\) is only 32% in FD-SOI-GP MOSFET, whereas it is 70% in the conventional FD-SOI. The lower variation in FD-SOI-GP is an outcome of the embedded GP, which controls the channel more efficiently. Additionally, the temperature-related change in sensitivity is greater in FD-SOI-GP (i.e. reduces from 2 × 109 to 2 × 103 in FD-SOI-GP and 7 × 106 to 50 in FD-SOI MOSFET when the temperature is increased from 200 K to 400 K). To strengthen the sensor attributes further, the GP parameters, i.e. depth and doping of the P + GP are altered, and the device characteristics are analyzed. According to the findings, the FD-SOI-GP-MOSFET exhibits lower leakage current than the conventional FD-SOI-MOSFET. This is what leads to the better sensitivity and detectivity of FD-SOI-GP MOSFET than its counterpart. Furthermore, sensitivity and detectivity gradually decline as the depth of the P+ region increases while rising in tandem with GP doping concentration. Additionally, the devices’ gate workfunctions have also been adjusted, and the sensitivity variation has been examined.
