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<p>This work presents an AlGaN/AlN/GaN MOSHEMT used for hydrogen (H<sub>2</sub>) gas sensing. The superior material and heterostructure properties of AlGaN/GaN HEMTs make them suitable for hydrogen gas sensing. The device utilises a thin AlN spacer layer between AlGaN and GaN, thereby stabilising electron mobility in the channel and enhancing device response. Palladium is used as the gate electrode and as the sensing membrane because it rapidly dissociates hydrogen upon contact. The hydrogen atoms are then absorbed at the interface, modulating the channel’s carrier density and thereby influencing the device’s response. The optimisation of device parameters, such as the mole fraction, AlGaN thickness, and the spacing between the drain, source, and gate terminals, has been carefully performed to achieve higher responsivity. Using the optimised parameters, the device is assessed at varying hydrogen concentrations, with a comparative analysis against the no-gas condition. The highest and lowest drain current sensitivities of 16.65% and 136.72%, respectively, are achieved at H<sub>2</sub> concentrations of 1 and 15 ppm. In addition, the device is investigated over the temperature range 300–340&#xa0;K under real physiological conditions and in harsh, high-temperature environments up to 500&#xa0;K to evaluate its operational stability. The device exhibits nearly constant current sensitivity across different temperature conditions, highlighting its stability and reliability.</p>

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Performance Assessment and Thermal Analysis of Highly Sensitive AlGaN/AlN/GaN MOS-HEMT Based Hydrogen Sensors

  • 期刊论文

  • 发表日期：

    2026年4月17日

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  • Yogendra Kumar,
  • Samarendra Samal,
  • Ashish Kumar,
  • Shashi Kant Sharma

摘要

This work presents an AlGaN/AlN/GaN MOSHEMT used for hydrogen (H2) gas sensing. The superior material and heterostructure properties of AlGaN/GaN HEMTs make them suitable for hydrogen gas sensing. The device utilises a thin AlN spacer layer between AlGaN and GaN, thereby stabilising electron mobility in the channel and enhancing device response. Palladium is used as the gate electrode and as the sensing membrane because it rapidly dissociates hydrogen upon contact. The hydrogen atoms are then absorbed at the interface, modulating the channel’s carrier density and thereby influencing the device’s response. The optimisation of device parameters, such as the mole fraction, AlGaN thickness, and the spacing between the drain, source, and gate terminals, has been carefully performed to achieve higher responsivity. Using the optimised parameters, the device is assessed at varying hydrogen concentrations, with a comparative analysis against the no-gas condition. The highest and lowest drain current sensitivities of 16.65% and 136.72%, respectively, are achieved at H2 concentrations of 1 and 15 ppm. In addition, the device is investigated over the temperature range 300–340 K under real physiological conditions and in harsh, high-temperature environments up to 500 K to evaluate its operational stability. The device exhibits nearly constant current sensitivity across different temperature conditions, highlighting its stability and reliability.