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<p>In this work, we propose a biosensor for biomolecule detection using an Extended Source Fin-Tunnel FET (ES Fin-TFET) based on the dielectric modulation (DM) mechanism. This ES Fin-TFET architecture incorporates an extended source region, utilizing Germanium as a low-bandgap material in the source region, and Silicon as the channel material to form a heterojunction, all designed to significantly enhance the TFET’s performance. The high on-current (1.25 × 10<sup>− 5</sup> A), low off-current (1.35 × 10<sup>− 17</sup>&#xa0;A), and steep subthreshold swing (23 mV/decade) of the ES Fin-TFET have been leveraged to enhance sensing capabilities. Through simulation analysis, we found that the ES Fin-TFET-based biosensor offers a sensitivity of 6.83 × 10<sup>5</sup> for neutral biomolecules. The ES Fin-TFET-based biosensor responds to significant changes in the on–off current ratio and threshold voltage when exposed to different biomolecules owing to biomolecule-induced dielectric changes. The findings of this work suggest that ES Fin-TFET can be a promising device for sensitive, label-free detection of biomolecules, which could further enhance diagnostic and monitoring systems.</p>

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Dielectric Modulation-Based High-Sensitivity Biomolecular Detection Using Ge/Si Heterostructure ES Fin-TFET Biosensors: A Detailed Performance Study

  • 期刊论文

  • 发表日期：

    2026年1月8日

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  • B. V. Rao,
  • Arun Kumar,
  • P. S. T. N. Srinivas,
  • Brinda Bhowmick

摘要

In this work, we propose a biosensor for biomolecule detection using an Extended Source Fin-Tunnel FET (ES Fin-TFET) based on the dielectric modulation (DM) mechanism. This ES Fin-TFET architecture incorporates an extended source region, utilizing Germanium as a low-bandgap material in the source region, and Silicon as the channel material to form a heterojunction, all designed to significantly enhance the TFET’s performance. The high on-current (1.25 × 10− 5 A), low off-current (1.35 × 10− 17 A), and steep subthreshold swing (23 mV/decade) of the ES Fin-TFET have been leveraged to enhance sensing capabilities. Through simulation analysis, we found that the ES Fin-TFET-based biosensor offers a sensitivity of 6.83 × 105 for neutral biomolecules. The ES Fin-TFET-based biosensor responds to significant changes in the on–off current ratio and threshold voltage when exposed to different biomolecules owing to biomolecule-induced dielectric changes. The findings of this work suggest that ES Fin-TFET can be a promising device for sensitive, label-free detection of biomolecules, which could further enhance diagnostic and monitoring systems.