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<p>This study examines the analog behavior and sensitivity characteristics of an n-channel Gate Stack Dual Material Double Gate (DMDG) MOSFET biosensor, with a focus on its response to charged biomolecules introduced within the cavity region. The proposed architecture leverages advanced gate material engineering to achieve precise modulation of the threshold voltage and enhanced control over the electrostatic environment, offering superior sensitivity and selectivity compared to conventional MOSFET-based biosensors. The analysis incorporates a comprehensive evaluation of surface potential, electric field distributions, transconductance, and threshold voltage shifts induced by charged biomolecules. Utilizing a parabolic-potential approach to solve the two-dimensional Poisson’s equation, novel expressions for surface potential are derived and employed to calculate the threshold voltage using a minimal surface potential model. The parabolic-potential and minimal surface potential models were chosen for their analytical simplicity and physical relevance in modeling short-channel DG-MOSFET biosensors. These methods allow closed-form expressions for key parameters like surface potential and threshold voltage, aiding efficient performance evaluation. Unlike complex numerical simulations, these models balance accuracy with computational efficiency, making them ideal for biosensor design optimization. Simulations performed with the SILVACO ATLAS platform reveal that the gate stack DMDG-MOSFET achieves sensitivities of 0.123&#xa0;V and 0.607&#xa0;V for neutral and charged biomolecules, respectively. These results underscore the significant impact of gate material optimization on enhancing the performance metrics of biosensors in detecting biomolecular charges. </p>

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Performance Investigation and Model Development of DMDG-MOSFET Based Biosensor for Charged Bio Molecule Detection

  • 期刊论文

  • 发表日期：

    2025年6月7日

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  • Satish Kumar Das,
  • Sudhansu Mohan Biswal,
  • LalatIndu Giri,
  • Ipsita Pahi,
  • Umakanta Nanda

摘要

This study examines the analog behavior and sensitivity characteristics of an n-channel Gate Stack Dual Material Double Gate (DMDG) MOSFET biosensor, with a focus on its response to charged biomolecules introduced within the cavity region. The proposed architecture leverages advanced gate material engineering to achieve precise modulation of the threshold voltage and enhanced control over the electrostatic environment, offering superior sensitivity and selectivity compared to conventional MOSFET-based biosensors. The analysis incorporates a comprehensive evaluation of surface potential, electric field distributions, transconductance, and threshold voltage shifts induced by charged biomolecules. Utilizing a parabolic-potential approach to solve the two-dimensional Poisson’s equation, novel expressions for surface potential are derived and employed to calculate the threshold voltage using a minimal surface potential model. The parabolic-potential and minimal surface potential models were chosen for their analytical simplicity and physical relevance in modeling short-channel DG-MOSFET biosensors. These methods allow closed-form expressions for key parameters like surface potential and threshold voltage, aiding efficient performance evaluation. Unlike complex numerical simulations, these models balance accuracy with computational efficiency, making them ideal for biosensor design optimization. Simulations performed with the SILVACO ATLAS platform reveal that the gate stack DMDG-MOSFET achieves sensitivities of 0.123 V and 0.607 V for neutral and charged biomolecules, respectively. These results underscore the significant impact of gate material optimization on enhancing the performance metrics of biosensors in detecting biomolecular charges.