Analytical Modeling and TCAD Simulation of Junctionless DG TFET with Enhanced Sensitivity for Biomolecule Detection
摘要
This work proposes a charge plasma-based dielectrically modulated junctionless double-gate TFET (CP-DM-JLDGTFET) as a label-free biosensor. For the first time, a flipped L-shaped nano-cavity with a thin high-k (HfO2) layer is employed for biomolecule immobilization. The junctionless charge plasma mechanism addresses challenges such as random dopant fluctuation and high thermal budgets inherent to conventional TFETs. Extending the nano-gap cavity from the channel into a small section of the source significantly enhances the sensor’s sensitivity, achieving a drain current sensitivity of ~ 8.61 × 1010 at a dielectric constant of k = 12. An analytical model for the proposed device is developed, showing excellent agreement with Silvaco TCAD simulations. Comprehensive performance analysis is conducted to optimize both device sensitivity and ON current, highlighting the potential of this biosensor for advanced applications.