<p>This work presents, a 2-D analytical model of Stack oxide double gate junctionless transistor (SO-DGJLT) for ammonia (NH<sub>3</sub>) gas sensing along with investigation of its linearity characteristics and reliability analysis. Catalytic metal gate with SiO<sub>2</sub>/HfO<sub>2</sub> stack layer is utilized to detect the existence of NH<sub>3</sub> gas. For validation of analytical model, SO-DGJLT has been designed using Sentaurus TCAD simulator. Work function modulation of catalytic gate is used to investigate change in electrical characteristics of device on exposure to NH<sub>3</sub>. Cobalt (Co) and Molybdenum (Mo) are used as gate electrodes because of their strong reactivity and sensitivity towards NH<sub>3</sub>. The sensitivity analysis of SO-DGJLT NH<sub>3</sub> gas sensor is carried out by evaluating change in—channel potential, threshold voltage sensitivity (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({S}_{{v}_{TH}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>S</mi> <msub> <mi>v</mi> <mrow> <mi mathvariant="italic">TH</mi> </mrow> </msub> </msub> </math></EquationSource> </InlineEquation>), drain current, OFF and ON current sensitivity (<InlineEquation ID="IEq2"> <EquationSource Format="TEX">\({S}_{IdOFF}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>S</mi> <mrow> <mi mathvariant="italic">IdOFF</mi> </mrow> </msub> </math></EquationSource> </InlineEquation> and <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\({S}_{IdON}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>S</mi> <mrow> <mi mathvariant="italic">IdON</mi> </mrow> </msub> </math></EquationSource> </InlineEquation>) and switching ratio. The reported OFF current sensitivity and switching ratio (I<sub>dON</sub>/I<sub>dOFF</sub>) for Cobalt gate device is 735 and 3.06 × 10<sup>13</sup> respectively which is found to be higher than Molybdenum gate device. Furthermore, the linearity performance of SO-DGJLT NH<sub>3</sub> gas sensor has been tested by evaluating the higher order transconducance such as—g<sub>m1</sub> and g<sub>m3</sub>. The stability and reproducibility of proposed sensor have also been investigated in terms of sensitivity parameters to carry out reliability analysis in temperature range of 275–375&#xa0;K. Finally, a thorough comparison of SO-DGJLT NH<sub>3</sub> gas sensor has been performed with existing ammonia gas sensors and the results demonstrate that the proposed sensor exhibits high sensitivity, which proves it to a potential device for the detection of NH<sub>3</sub>.</p>

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Designing and Reliability Assessment of Stack Oxide Double Gate Junctionless Transistor Based Ammonia Gas Sensor

  • Divya Babbar,
  • Neha Garg,
  • Sneha Kabra

摘要

This work presents, a 2-D analytical model of Stack oxide double gate junctionless transistor (SO-DGJLT) for ammonia (NH3) gas sensing along with investigation of its linearity characteristics and reliability analysis. Catalytic metal gate with SiO2/HfO2 stack layer is utilized to detect the existence of NH3 gas. For validation of analytical model, SO-DGJLT has been designed using Sentaurus TCAD simulator. Work function modulation of catalytic gate is used to investigate change in electrical characteristics of device on exposure to NH3. Cobalt (Co) and Molybdenum (Mo) are used as gate electrodes because of their strong reactivity and sensitivity towards NH3. The sensitivity analysis of SO-DGJLT NH3 gas sensor is carried out by evaluating change in—channel potential, threshold voltage sensitivity ( \({S}_{{v}_{TH}}\) S v TH ), drain current, OFF and ON current sensitivity ( \({S}_{IdOFF}\) S IdOFF and \({S}_{IdON}\) S IdON ) and switching ratio. The reported OFF current sensitivity and switching ratio (IdON/IdOFF) for Cobalt gate device is 735 and 3.06 × 1013 respectively which is found to be higher than Molybdenum gate device. Furthermore, the linearity performance of SO-DGJLT NH3 gas sensor has been tested by evaluating the higher order transconducance such as—gm1 and gm3. The stability and reproducibility of proposed sensor have also been investigated in terms of sensitivity parameters to carry out reliability analysis in temperature range of 275–375 K. Finally, a thorough comparison of SO-DGJLT NH3 gas sensor has been performed with existing ammonia gas sensors and the results demonstrate that the proposed sensor exhibits high sensitivity, which proves it to a potential device for the detection of NH3.