Designing and Reliability Assessment of Stack Oxide Double Gate Junctionless Transistor Based Ammonia Gas Sensor
摘要
This work presents, a 2-D analytical model of Stack oxide double gate junctionless transistor (SO-DGJLT) for ammonia (NH3) gas sensing along with investigation of its linearity characteristics and reliability analysis. Catalytic metal gate with SiO2/HfO2 stack layer is utilized to detect the existence of NH3 gas. For validation of analytical model, SO-DGJLT has been designed using Sentaurus TCAD simulator. Work function modulation of catalytic gate is used to investigate change in electrical characteristics of device on exposure to NH3. Cobalt (Co) and Molybdenum (Mo) are used as gate electrodes because of their strong reactivity and sensitivity towards NH3. The sensitivity analysis of SO-DGJLT NH3 gas sensor is carried out by evaluating change in—channel potential, threshold voltage sensitivity (