Modeling and Simulation of Quantum State Distribution in Graphene Nanoribbon GaN/InSb TFETs for High-Precision Biosensing Applications

This study examines graphene nanoribbon tunnel field-effect transistors utilizing GaN/InSb (GR-GaN/InSb TFETs) with novel doping profiles aimed at enhancing performance in nanoscale applications, specifically for sub-5 nm technology. This study employs quantum simulations grounded in the Non-Equilibrium Green’s Function (NEGF) formalism to model the I-V characteristics, subthreshold swing, charge density, and I_ON/I_OFF ratios of the proposed designs. The tailored doping profiles effectively mitigate direct source-to-drain tunneling, a significant challenge in ultra-scaled GR-GaN/InSb TFETs, while also reducing ambipolar behavior and enhancing metrics such as leakage current, switching speed, and energy efficiency. Additionally, this work explores double-gate GR-GaN/InSb TFETs with dielectric modulation for ultra-sensitive biomolecule sensing applications. The results indicate that these novel device architectures surpass traditional FET-based sensors regarding electrical performance and scalability. The proposed device utilizes dielectric and work function modulation techniques to enhance sensitivity and overall functionality, making it a promising candidate for low-power, high-performance biosensing applications.