Photonic Bandgap Properties of One-Dimensional Bilayer Periodic Structure Composed of Silicon Dioxide and Gallium Phosphide Material Layers

In the present work, we have investigated the optical properties of various one-dimensional photonic crystals composed of alternate material layers of silicon dioxide (SiO₂) and gallium phosphide (GaP). The choice of GaP material is due to its larger bandgap property with better thermal stability. It belongs to the category of an indirect bandgap semiconductor is commonly used in light-emitting diodes. The optical characteristics of various one-dimensional PCs consisting of different period number N have been investigated by using the transfer matrix approach. The transmittance and absorption characteristics of all structures have been examined. The present study also includes characteristics of the reflectance phase and relative percentage reflectance of all photonic structures. The dependence of the transmission characteristics of all structures on the thickness of SiO₂ and GaP material layers as well as on the incident angle corresponding to TE wave only have been also discussed in this work. Unlike two-dimensional and three-dimensional PCs the fabrication of one-dimensional photonic structures is easier. Any of the suitable thin film deposition techniques available at present can be used for the realization of such structures.