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<p>This study fabricated SnO<sub>2</sub> thin films doped with CdTe using pulsed laser deposition under vacuum. The influence of CdTe doping on structural, morphological, optical, and electrical properties was evaluated. X‑ray diffraction confirmed polycrystalline tetragonal SnO<sub>2</sub> with preferred (110) orientation, while the higher (20–40%) CdTe content produced additional peaks relating to CdTe phases. The crystallite size ranged from 29.8 to 33.8 nm, depending on the dopant concentration. SEM images showed irregular, mainly spherical grains with no major morphological change after doping. UV–Vis results indicated a&#xa0;reduced bandgap from 2.799 to 2.111 eV. I–V characteristics improved significantly, with the current increasing from 1.209·10<sup>−6</sup> A (pure SnO<sub>2</sub>) to 3.56·10<sup>−3</sup> A (20% CdTe) at 100 mW.</p>

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Fabrication and Characterization of CdTe-Doped SnO2 Thin Films Deposited by Pulsed Laser Deposition: Structural, Optical, Morphological, and Electrical Properties

  • 期刊论文

  • 发表日期：

    2026年6月2日

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  • Mustafa Basil Hayawi,
  • Qasim Hammadi Mahmoud

摘要

This study fabricated SnO2 thin films doped with CdTe using pulsed laser deposition under vacuum. The influence of CdTe doping on structural, morphological, optical, and electrical properties was evaluated. X‑ray diffraction confirmed polycrystalline tetragonal SnO2 with preferred (110) orientation, while the higher (20–40%) CdTe content produced additional peaks relating to CdTe phases. The crystallite size ranged from 29.8 to 33.8 nm, depending on the dopant concentration. SEM images showed irregular, mainly spherical grains with no major morphological change after doping. UV–Vis results indicated a reduced bandgap from 2.799 to 2.111 eV. I–V characteristics improved significantly, with the current increasing from 1.209·10−6 A (pure SnO2) to 3.56·10−3 A (20% CdTe) at 100 mW.