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<p>Metal oxide semiconductors (MOSs) are favored for gas sensing due to their high sensitivity, stability, and cost-effectiveness. An enhanced hydrogen detection is demonstrated by synthesizing and characterizing Nb<sub>2</sub>O<sub>5</sub>, SnO<sub>2</sub>, and Eu-doped SnO<sub>2</sub> (Eu-SnO<sub>2</sub>) thin films via RF-PVD to address the limitations of conventional sensors. Their structural characterization reveals an amorphous Nb<sub>2</sub>O<sub>5</sub> phase and a&#xa0;tetragonal crystalline structure for both the SnO<sub>2</sub> and Eu-SnO<sub>2</sub> films, which exhibit equiaxed grain morphologies. A&#xa0;gas sensing evaluation demonstrates that Nb<sub>2</sub>O<sub>5</sub> only responds at high hydrogen concentrations (10.000 ppm). In contrast, SnO<sub>2</sub> and Eu-SnO<sub>2</sub> films successfully detect low concentrations of 100 and 50 ppm, respectively. These results confirm the superior potential of SnO<sub>2</sub>-based films, particularly with Eu doping, for efficient and highly responsive hydrogen gas sensing.</p>

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Nb2O5, SnO2, and Eu-Doped SnO2 thin film gas sensors: synthesis and characterization

  • 期刊论文

  • 发表日期：

    2026年1月15日

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  • Furkan Cengiz,
  • Kadri Vefa Ezirmik,
  • Ozan Bingöl,
  • Fatma Songur Demirtaş,
  • Taha Çağrı Şenocak

摘要

Metal oxide semiconductors (MOSs) are favored for gas sensing due to their high sensitivity, stability, and cost-effectiveness. An enhanced hydrogen detection is demonstrated by synthesizing and characterizing Nb2O5, SnO2, and Eu-doped SnO2 (Eu-SnO2) thin films via RF-PVD to address the limitations of conventional sensors. Their structural characterization reveals an amorphous Nb2O5 phase and a tetragonal crystalline structure for both the SnO2 and Eu-SnO2 films, which exhibit equiaxed grain morphologies. A gas sensing evaluation demonstrates that Nb2O5 only responds at high hydrogen concentrations (10.000 ppm). In contrast, SnO2 and Eu-SnO2 films successfully detect low concentrations of 100 and 50 ppm, respectively. These results confirm the superior potential of SnO2-based films, particularly with Eu doping, for efficient and highly responsive hydrogen gas sensing.