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<p>This paper presents the results of calculations and experimental investigations of steady-state current-voltage characteristics and electric field distribution made for single-element (pad) and multi-element X‑ray sensors based on high-resistive chromium-compensated gallium arsenide (HR-GaAs:Cr). Experimental IV-curves of pad sensors have been used to verify and optimize the calculation model. The model was optimized by varying the concentration of thermal acceptors and potential barrier height. The main criterion of optimization was the best agreement between the calculated and measured IV&#xa0;characteristics of the pad sensors. Furthermore, we applied the optimized model to calculate the IV-curves and electric field strength profiles within pixel sensors. Reults of our calculations reveal that in the voltage range from 0.05 to 1 V, the dark current is governed by both the electron and hole components; however, at voltages above 10 V, the contribution of holes to the dark current prevails. It is demonstrated that the distribution of the electric field strength within the sensor volume remains unchanged when the temperature varies from +25&#xa0;to +50 °C.</p>

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Steady-state current-voltage characteristics and electric field profiles in multi-element HR-GaAs:Cr X-ray sensors

  • 期刊论文

  • 发表日期：

    2025年11月1日

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  • K. A. Chashtanov,
  • A. E. Vinnik,
  • A. N. Zarubin,
  • P. V. Kosmachev,
  • I. D. Chsherbakov,
  • Y. S. Petrova,
  • M. S. Skakunov,
  • O. P. Tolbanov,
  • A. V Tyazhev,
  • L. K. Shaimerdenova,
  • A. V. Shemeryankina,
  • M. S. Trofimov,
  • T. A. Mikhailov

摘要

This paper presents the results of calculations and experimental investigations of steady-state current-voltage characteristics and electric field distribution made for single-element (pad) and multi-element X‑ray sensors based on high-resistive chromium-compensated gallium arsenide (HR-GaAs:Cr). Experimental IV-curves of pad sensors have been used to verify and optimize the calculation model. The model was optimized by varying the concentration of thermal acceptors and potential barrier height. The main criterion of optimization was the best agreement between the calculated and measured IV characteristics of the pad sensors. Furthermore, we applied the optimized model to calculate the IV-curves and electric field strength profiles within pixel sensors. Reults of our calculations reveal that in the voltage range from 0.05 to 1 V, the dark current is governed by both the electron and hole components; however, at voltages above 10 V, the contribution of holes to the dark current prevails. It is demonstrated that the distribution of the electric field strength within the sensor volume remains unchanged when the temperature varies from +25 to +50 °C.