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<p>The results of a&#xa0;study on the sensitivity of sensors fabricated from single-crystal sapphire and bulk undoped silicon carbide to X‑ray radiation with photon energies in the range of 10–80 keV are presented. The photocurrent is measured experimentally and the carrier lifetime is estimated. The photocurrent dependence on the X‑ray intensity and the sensor voltage is determined experimentally and via modeling.</p>

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Photocurrent of X-ray sensors made of single crystal sapphire and undoped silicon carbide under irradiation by polychromatic X-ray

  • 期刊论文

  • 发表日期：

    2025年10月1日

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  • K. A. Chashtanov,
  • A. V. Tyazhev,
  • A. V. Zhidikov,
  • M. S. Trofimov,
  • Yu. S. Petrova,
  • L. K. Shaimerdenova,
  • A. V. Shemeryankina,
  • P. V. Kosmachev,
  • A. N. Zarubin,
  • O. P. Tolbanov,
  • V. V. Babeshko

摘要

The results of a study on the sensitivity of sensors fabricated from single-crystal sapphire and bulk undoped silicon carbide to X‑ray radiation with photon energies in the range of 10–80 keV are presented. The photocurrent is measured experimentally and the carrier lifetime is estimated. The photocurrent dependence on the X‑ray intensity and the sensor voltage is determined experimentally and via modeling.