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<p>The paper proposes the model of motion of monoatomic&#xa0;A and&#xa0;B steps on the vicinal Si(100)-2×1 surface that accounts for the formation of Si dimers in kinks in a&#xa0;consequence of elementary processes of the adatom attachment to the kink, detachment of a&#xa0;single atom from the kink, dimer dissociation, and Si adatom migration along the step edge. It is shown that in the case of permeable A steps and impermeable B steps, the rapid formation of biatomic steps observed in the experiment, occurs even in the absence of both conventional and inverse Ehrlich–Schwoebel barriers.</p>

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Formation of building units in kinks and dynamics of A and B steps on Si(100)-2×1 vicinal surface

  • 期刊论文

  • 发表日期：

    2025年9月1日

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  • Yu. Yu. Hervieu

摘要

The paper proposes the model of motion of monoatomic A and B steps on the vicinal Si(100)-2×1 surface that accounts for the formation of Si dimers in kinks in a consequence of elementary processes of the adatom attachment to the kink, detachment of a single atom from the kink, dimer dissociation, and Si adatom migration along the step edge. It is shown that in the case of permeable A steps and impermeable B steps, the rapid formation of biatomic steps observed in the experiment, occurs even in the absence of both conventional and inverse Ehrlich–Schwoebel barriers.