Scholarlink

<p>The paper proposes a&#xa0;four-level model which includes deep and shallow acceptors and donors, allowing to predict characteristics for the HR GaAs:Cr material and sensors. It is shown that the best agreement between the simulated values and experimental data of the non-equilibrium charge carrier lifetime, Hall mobility, and resistivity of the HR GaAs:Cr material, is achieved at the EL2 center concentration in the range of (1 to&#xa0;3)∙10<sup>15</sup> cm<sup>–3</sup>, the Cr concentration of about 1∙10<sup>17</sup> cm<sup>–3</sup>, and the concentration of thermal acceptors in the range of (1 to&#xa0;4)∙10<sup>16</sup> cm<sup>–3</sup>. It is shown that EL2<sup>+</sup> and Cr ionized centers are the dominant deep levels that determine the lifetime of respectively non-equilibrium electrons and holes in LEC HR GaAs:Cr.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Simulation of lateral distribution of resistivity and charge carrier lifetime in chromium-compensated gallium arsenide wafers

  • 期刊论文

  • 发表日期：

    2025年5月1日

查看全文
  • A. E. Vinnik,
  • A. N. Zarubin,
  • P. V. Kosmachev,
  • A. D. Lozinskaya,
  • I. D. Chsherbakov,
  • Y. S. Petrova,
  • M. S. Skakunov,
  • O. P. Tolbanov,
  • A. V Tyazhev,
  • L. K. Shaimerdenova,
  • A. V. Shemeryankina

摘要

The paper proposes a four-level model which includes deep and shallow acceptors and donors, allowing to predict characteristics for the HR GaAs:Cr material and sensors. It is shown that the best agreement between the simulated values and experimental data of the non-equilibrium charge carrier lifetime, Hall mobility, and resistivity of the HR GaAs:Cr material, is achieved at the EL2 center concentration in the range of (1 to 3)∙1015 cm–3, the Cr concentration of about 1∙1017 cm–3, and the concentration of thermal acceptors in the range of (1 to 4)∙1016 cm–3. It is shown that EL2+ and Cr ionized centers are the dominant deep levels that determine the lifetime of respectively non-equilibrium electrons and holes in LEC HR GaAs:Cr.