Current–voltage characteristic of ionizing radiation sensors based on HR-GaAs:Cr
摘要
The paper presents calculation of current–voltage characteristics of Me-i-Me HR-GaAs:Cr structures compared with the experimental data. With respect to the voltage redistribution to an extremely high resistance of the i-layer, the current flow is limited by processes in the space charge region of the reverse-biased Schottky barrier formed at the i-Me interface.