Electronic Properties of Highly Compensated Semiconductors: The HR-GaAs:Cr Material
摘要
It is found out that the HR-GaAs:Cr material is formed when the conductivity of n-GaAs is compensated by NCr chromium atoms, resulting in highly localized acceptor states at the mid of the bandgap. Such a structure is characterized by both the extremely high resistivity (ρmax), exceeding the resistance (ρi) of its own semiconductor (ρmax ≥ ρi), and the prolonged lifetime (τn) of non-equilibrium electrons, determining its high photosensitivity. Thus, it can be implemented in various basic electronic components for functional devices.