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<p>The work presents a new approach to the synthesis of C/SiC composite fibers and nanocrystalline silicon carbide (SiC) with particle sizes of 50–100 nm. The method is based on coupled gas-solids reactions between silicon and carbon precursors using SiO gas, which enables the simultaneous production of composite fibers and high-purity nanocrystalline SiC within a single reaction volume. The phase composition, morphology, and elemental composition of the products were analyzed using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It was shown that the synthesized β-SiC is characterized by high uniformity, purity, and the presence of stacking faults. The developed method allows for controlling the synthesis process and obtaining pure (free of residual silicon) nanocrystalline β-SiC, whose crystal structure is characterized by a comparatively low concentration of stacking faults, which are characteristic of nanocrystalline β-SiC.</p>

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Nanocrystalline SiC as a byproduct in gas-phase synthesis of C/SiC core-shell composite fibers

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • E. I. Istomina,
  • P. V. Istomin,
  • A. V. Nadutkin,
  • V. E. Grass,
  • I. M. Belyaev,
  • O. G. Baeva,
  • Yu. P. Istomina

摘要

The work presents a new approach to the synthesis of C/SiC composite fibers and nanocrystalline silicon carbide (SiC) with particle sizes of 50–100 nm. The method is based on coupled gas-solids reactions between silicon and carbon precursors using SiO gas, which enables the simultaneous production of composite fibers and high-purity nanocrystalline SiC within a single reaction volume. The phase composition, morphology, and elemental composition of the products were analyzed using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It was shown that the synthesized β-SiC is characterized by high uniformity, purity, and the presence of stacking faults. The developed method allows for controlling the synthesis process and obtaining pure (free of residual silicon) nanocrystalline β-SiC, whose crystal structure is characterized by a comparatively low concentration of stacking faults, which are characteristic of nanocrystalline β-SiC.