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<p>Solar-driven photocatalytic CO<sub>2</sub> conversion is a promising method for tackling the energy crisis and reducing CO<sub>2</sub> emissions. In this work, four GaN-based photoanodes with different structural configurations were fabricated by molecular beam epitaxy to investigate the effects of substrate type, AlN buffer layer, and InGaN insertion layer on photoelectrochemical CO<sub>2</sub> reduction performance. The results showed that Sample 1 (sapphire substrate with AlN buffer layer) exhibited the best crystalline quality and lowest defect density, delivering a photocurrent density of 0.08&#xa0;mA&#xa0;cm<sup>−2</sup>. The CO and H<sub>2</sub> production rates reached 0.76&#xa0;μmol&#xa0;mol<sup>−1</sup> and 19.48&#xa0;μmol&#xa0;mol<sup>−1</sup>, respectively, representing the highest performance among all samples. In contrast, Sample 3 (n-SiC substrate) showed poor crystallinity and the lowest photocurrent density of 0.0003&#xa0;mA&#xa0;cm<sup>−2</sup> due to high defect density. A clear positive correlation between photocurrent density and product yields was observed across all samples, confirming that carrier generation and transport efficiency are key factors determining CO<sub>2</sub> reduction performance. This study provides meaningful guidance for designing high-performance GaN-based photoanodes through structural optimization.</p>

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Structure-dependent photoelectrochemical performance of GaN-based photoanodes for solar-driven CO2 reduction

  • 期刊论文

  • 发表日期：

    2026年5月20日

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  • Wei Sun,
  • Hui Zhang,
  • Jiaxuan Ren,
  • Zhekai Xu,
  • Nan Gao,
  • Xinjian Xie,
  • Lifeng Bian,
  • Yulong Fang,
  • Guifeng Chen

摘要

Solar-driven photocatalytic CO2 conversion is a promising method for tackling the energy crisis and reducing CO2 emissions. In this work, four GaN-based photoanodes with different structural configurations were fabricated by molecular beam epitaxy to investigate the effects of substrate type, AlN buffer layer, and InGaN insertion layer on photoelectrochemical CO2 reduction performance. The results showed that Sample 1 (sapphire substrate with AlN buffer layer) exhibited the best crystalline quality and lowest defect density, delivering a photocurrent density of 0.08 mA cm−2. The CO and H2 production rates reached 0.76 μmol mol−1 and 19.48 μmol mol−1, respectively, representing the highest performance among all samples. In contrast, Sample 3 (n-SiC substrate) showed poor crystallinity and the lowest photocurrent density of 0.0003 mA cm−2 due to high defect density. A clear positive correlation between photocurrent density and product yields was observed across all samples, confirming that carrier generation and transport efficiency are key factors determining CO2 reduction performance. This study provides meaningful guidance for designing high-performance GaN-based photoanodes through structural optimization.