Zr-Bi2WO6 with abundant oxygen vacancy for activation of peroxydisulfate (PDS) to photodegrade RhB
摘要
Crystal defect engineering, as a key strategy for regulating the performance of semiconductor photocatalysis, has received extensive attention. This study successfully constructed controllable crystal defects and oxygen vacancies in the Bi2WO6 lattice by regulating the doping amount of Zr element. Combined with the photocatalytic activation of PDS, this system achieved efficient co-degradation of rhodamine B (RhB). The degradation rate of RhB reached 99.12% after 8 min of light exposure, and its reaction rate constant (0.05242 min⁻1) was 62.40 times that of pure Bi2WO6 under light conditions. The XPS and EPR results jointly confirmed that Zr can replace W6+ in the Bi2WO6 crystal structure and form defects, generating a large number of oxygen vacancies. Further characterization through photoluminescence spectroscopy (PL), photocurrent testing, and electrochemical impedance spectroscopy (EIS) revealed that Zr3-Bi2WO6 has a higher charge migration rate and better carrier separation efficiency, which jointly promoted the improvement of photocatalytic performance. Through careful analysis of the experimental results, the crystal defects and oxygen vacancies mediated by Zr doping played a key role in regulating the photocatalytic performance of Bi2WO6, providing important references for the design of efficient solar-driven advanced oxidation systems.