Extreme Ultraviolet Light Source Based on Xenon Plasma: Fundamentals, Recent Results, and Prospects for Lithography
摘要
The paper considers a laser discharge supported by an infrared laser in a jet of a heavy gas as a source of extreme ultraviolet (EUV) radiation for lithography. It is shown theoretically and demonstrated in the experiment that the region occupied by the plasma emitting in the EUV wavelength range is much larger than the laser focal spot. Expansion of the emitting plasma beyond the laser focus is explained by the photoionization of the surrounding gas and subsequent heating of electrons by the heat flux from the energy deposition region due to thermal conductivity. The possibilities of optimizing the EUV radiation source based on the discharge under consideration are studied. Limiting parameters of the xenon plasma-based EUV radiation source intended for use in the Alpha Machine project are discussed. It is planned to create a demonstration EUV lithograph within the framework of the project. It is shown that the use of a xenon jet can provide efficiency at the level of the existing commercial sources.