<p>Capacitors are crucial components of superconducting qubits. Using the energy participation ratio method, we show that arc-edged capacitors reduce interface energy participation and improve electric field distribution relative to rectangular designs, supporting enhanced decoherence time. Here, we further optimize double-pad capacitor geometries by exploring how arc number and profile on opposing sides affect the Purcell-limited upper bound of <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(T_\text {1,limit}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>T</mi> <mtext>1,limit</mtext> </msub> </math></EquationSource> </InlineEquation>. We deploy a deep reinforcement learning dual neural network model to enable autonomous, human-in-the-loop-free capacitor shape evolution. With <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(T_\text {1,limit}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>T</mi> <mtext>1,limit</mtext> </msub> </math></EquationSource> </InlineEquation> as the optimization target and a fixed <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(430~\mathrm {\mu m} \times 300~\mathrm {\mu m}\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>430</mn> <mspace width="3.33333pt" /> <mrow> <mi>μ</mi> <mi mathvariant="normal">m</mi> </mrow> <mo>×</mo> <mn>300</mn> <mspace width="3.33333pt" /> <mrow> <mi>μ</mi> <mi mathvariant="normal">m</mi> </mrow> </mrow> </math></EquationSource> </InlineEquation> footprint, our optimized arc-edge design exhibits a notable enhancement in the Purcell-limited <InlineEquation ID="IEq4"> <EquationSource Format="TEX">\(T_\text {1,limit}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>T</mi> <mtext>1,limit</mtext> </msub> </math></EquationSource> </InlineEquation> relative to traditional rectangular capacitors. Subsequent supplementary 3D simulations further reveal that the optimized structure also mitigates surface dielectric loss, suggesting potential improvements in comprehensive coherence performance. This work thus presents a promising simulation-driven approach to the optimized design of superconducting qubit capacitors, with additional coherence benefits supported by complementary dielectric loss analysis.</p>

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Optimization of superconducting qubit capacitor geometry based on deep reinforcement learning

  • Chaojie Zhang,
  • Weilong Wang,
  • Jiaxin Li,
  • Benzheng Yuan,
  • Xiaohan Yu,
  • Zhiguo Zha,
  • Qing Mu,
  • Zheng Shan

摘要

Capacitors are crucial components of superconducting qubits. Using the energy participation ratio method, we show that arc-edged capacitors reduce interface energy participation and improve electric field distribution relative to rectangular designs, supporting enhanced decoherence time. Here, we further optimize double-pad capacitor geometries by exploring how arc number and profile on opposing sides affect the Purcell-limited upper bound of \(T_\text {1,limit}\) T 1,limit . We deploy a deep reinforcement learning dual neural network model to enable autonomous, human-in-the-loop-free capacitor shape evolution. With \(T_\text {1,limit}\) T 1,limit as the optimization target and a fixed \(430~\mathrm {\mu m} \times 300~\mathrm {\mu m}\) 430 μ m × 300 μ m footprint, our optimized arc-edge design exhibits a notable enhancement in the Purcell-limited \(T_\text {1,limit}\) T 1,limit relative to traditional rectangular capacitors. Subsequent supplementary 3D simulations further reveal that the optimized structure also mitigates surface dielectric loss, suggesting potential improvements in comprehensive coherence performance. This work thus presents a promising simulation-driven approach to the optimized design of superconducting qubit capacitors, with additional coherence benefits supported by complementary dielectric loss analysis.