Construction of CaSnO3:Bi2+ NIR Long-Persistent Luminescent Material with Trap Level Up-Conversion and Bi2+ Concentration Effect
摘要
This study focuses on synthesizing and characterizing CaSnO3:Bi2+ near-infrared (NIR) long persistent luminescent materials. NIR persistent luminescent materials enable safe and efficient imaging due to their deep tissue penetration and reduced phototoxicity compared to ultraviolet (UV) excited materials. The CaSnO3:Bi2+ materials were synthesized using a high-temperature solid-state method. The effects of varying Bi2+ doping concentrations (1, 2, 5, 7, and 10%) on the material’s properties were systematically investigated. The synthesis process was confirmed by X-ray diffraction (XRD) analysis, revealing a perovskite structure for all samples. Scanning electron microscopy (SEM) analysis indicated uniform particle sizes of approximately 1 μm, successfully incorporating Bi2+ ions confirmed by energy-dispersive X-ray spectroscopy (EDS). The luminescent properties of the CaSnO3:Bi2+ materials were characterized using fluorescence spectroscopy and thermoluminescence spectroscopy. The excitation and emission spectra showed peaks at 260, 620, and 680 nm, corresponding to the transitions of Bi2+ ions. The samples exhibited NIR persistent luminescence under 260 nm excitation, with the CaSnO3:5% Bi2+ sample demonstrating the highest phosphorescence intensity and longest decay time. This optimal performance was attributed to the highest trap concentration, confirmed by thermoluminescence spectroscopy. The persistent NIR luminescence of the CaSnO3:Bi2+ materials was attributed to trap level up-conversion, a phenomenon where NIR excitation leads to NIR emission without the involvement of up-conversion materials. This mechanism arises from the reverse carrier transition from deep traps (DTs) to shallow traps (STs). Thermoluminescence spectroscopy further confirmed the occurrence of trap level up-conversion in the CaSnO3:5% Bi2+ sample. The successful synthesis and characterization of CaSnO3:Bi2+NIR long persistent luminescent materials with trap level up-conversion mechanisms opens up new avenues for their application in various fields.