One-Step Deposition of Doped Graphene-Based Diamond Hybrid Using PECVD
摘要
A homemade plasma-enhanced chemical vapor deposition (PECVD) system was built and used to deposit a doped graphene-based diamond hybrid. The PECVD system was based on asymmetric capacitively coupled RF configuration. The deposition was carried out under a wide pressure range of argon-acetylene mixtures (25 mbar − 700 mabr) and the discharge RF power was kept at 100 watts. The deposited material was examined using XRD, TEM, Raman, FTIR and SAED characterization techniques. The characterization techniques revealed that the deposited material was a doped graphene-based diamond hybrid which is the first time to our knowledge, no prior report has demonstrated of a single-step synthesis of an N-doped graphene–diamond hybrid using an Ar/C₂H₂ RF-CCP system without introducing any nitrogen-containing precursor, external heating, or using any catalyst, accompanied by the formation of an interfacial CuCN phase.